IGW25T120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW25T120
Tipo de transistor: IGBT
Código de marcado: G25T120
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 190 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 96 pF
Qgⓘ - Carga total de la puerta, typ: 155 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IGW25T120 - IGBT
IGW25T120 Datasheet (PDF)
igw25t120.pdf
IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT
igw25t120 rev2 4g.pdf
IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT
igw25n120h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120IGW25N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIGW25N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120Features: CTRENC
igw25n120h3 .pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120IGW25N120H31200V high speed switching series third generationData sheetIndustrial & MultimarketIGW25N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120Features: CTRENC
Otros transistores... IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , RJH60F5DPQ-A0 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T .
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Recientemente añadidas las descripciónes de los transistores
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