IGW25T120 Todos los transistores

 

IGW25T120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW25T120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 190 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 96 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IGW25T120 Datasheet (PDF)

 ..1. Size:349K  infineon
igw25t120.pdf pdf_icon

IGW25T120

IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT

 ..2. Size:349K  infineon
igw25t120 rev2 4g.pdf pdf_icon

IGW25T120

IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT

 9.1. Size:2033K  infineon
igw25n120h3.pdf pdf_icon

IGW25T120

IGBTHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120IGW25N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIGW25N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120Features: CTRENC

 9.2. Size:901K  infineon
igw25n120h3 .pdf pdf_icon

IGW25T120

IGBTHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120IGW25N120H31200V high speed switching series third generationData sheetIndustrial & MultimarketIGW25N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120Features: CTRENC

Otros transistores... IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IKW50N60H3 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T .

History: SME6G15US60 | HGTM12N50E1 | MUBW40-12T7 | IXGA14N120B

 

 
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History: SME6G15US60 | HGTM12N50E1 | MUBW40-12T7 | IXGA14N120B

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