MOSFET Datasheet



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BF245A
  BF245A
  BF245A
  BF245A
 
BF245A
  BF245A
  BF245A
  BF245A
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..K4059
K596 ..KMB7D0DN40QB
KMB7D0N40QA ..LKK47-06C5
LS3954 ..MTB40P04J3
MTB40P06J3 ..MTN2572F3
MTN2572FP ..MTP6N60
MTP7425Q8 ..NTD20N06L
NTD20P06L ..NTR4503N
NTS2101P ..PHT6N06T
PHT6NQ10T ..PSMN1R5-25YL
PSMN1R5-30YL ..RF1S60P03SM
RF1S630SM ..RJK03E7DPA
RJK03E8DPA ..RQK0201QGDQA
RQK0202RGDQA ..SDF100NA40HI
SDF100NA40JD ..SFR9014
SFR9024 ..SMG2310N
SMG2314N ..SML40M42BFN
SML40M80AFN ..SPA11N60CFD
SPA11N65C3 ..SSE70N10-44P
SSE90N04-03P ..SSM3J305T
SSM3J306T ..SSM6P15FE
SSM6P15FU ..STB200N6F3
STB200NF03 ..STD3N30-1
STD3N30L ..STF2HNK60Z
STF2N62K3 ..STK9N10
STL100N1VH5 ..STP14NM50N
STP14NM65N ..STP5N50FI
STP5N52K3 ..STS4DPF30L
STS4NF100 ..STU622S
STU624S ..TF256TH
TF408 ..TK80X04K3
TK8A10K3 ..TPCA8048-H
TPCA8049-H ..UP9T15G
URFP150 ..WTC2306
WTC2312 ..ZXMP10A17G
ZXMP10A17K ..ZXMS6006SG
 
BF245A All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BF245A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BF245A

Type of BF245A transistor: FET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.35

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.0065

Maximum junction temperature (Tj), °C: 150

Rise Time of BF245A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1.1

Maximum drain-source on-state resistance (Rds), Ohm: 1000

Package: TO92

Equivalent transistors for BF245A - Cross-Reference Search

BF245A PDF doc:

1.1. bf245a_bf245b_bf245c_1.pdf Size:97K _philips

BF245A
BF245A
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING • Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION • Frequencies up to 700 MHz. 1 d drain 2 s source APPLICATIONS 3 g gate • LF, HF and DC amplifiers. DESCRIPTION 1 handbook, halfpage 2 General purpose N-channel symmetrical junction 3 d field-effect transistors in a plastic TO-92 variant package. g s MAM257 CAUTION The device is supplied in an antistatic package. The Fig.1 Simplified outline (TO-92 variant) gate-source input must be protected against static and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source vol

1.2. bf245a-bf245b-bf245c_2.pdf Size:67K _philips

BF245A
BF245A
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING • Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION • Frequencies up to 700 MHz. 1 d drain 2 s source APPLICATIONS 3 g gate • LF, HF and DC amplifiers. DESCRIPTION 1 handbook, halfpage 2 General purpose N-channel symmetrical junction 3 d field-effect transistors in a plastic TO-92 variant package. g s MAM257 CAUTION The device is supplied in an antistatic package. The Fig.1 Simplified outline (TO-92 variant) gate-source input must be protected against static and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source vol

1.3. bf245a-b-c.pdf Size:286K _philips

BF245A
BF245A
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 NXP Semiconductors Product specification BF245A; BF245B; N-channel silicon field-effect transistors BF245C FEATURES PINNING ? Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION ? Frequencies up to 700 MHz. 1 d drain 2 s source APPLICATIONS 3g gate ? LF, HF and DC amplifiers. DESCRIPTION 1 handbook, halfpage 2 General purpose N-channel symmetrical junction 3 d field-effect transistors in a plastic TO-92 variant package. g s MAM257 CAUTION The device is supplied in an antistatic package. The Fig.1 Simplified outline (TO-92 variant) gate-source input must be protected against static and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage ? ? ?30 V VGSoff gate-source c

1.4. bf245a_bf245b_bf245c.pdf Size:24K _fairchild_semi

BF245A
BF245A
BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25°C 350 mW Derate above 25°C 2.8 mW/°C TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1µA-30 V VGS Gate-Source BF245A VDS = 15V, ID = 200µA-0.4 -2.2 V BF245B -1.6 -3.8 BF245C -3.2 -7.5 VGS(off) Gate-Source Cut-off Voltage VDS = 15V, ID = 10nA -0.5 -8 V IGSS Gate Reverse Current VGS = -20V, VGS = 0 -5 nA On Characteristics IDSS Zero-Gate Voltage Drain Current BF245A VGS = 15V, VGS = 0 2 6.5 mA BF245B 6 15

1.5. bf245a-b.pdf Size:169K _onsemi

BF245A
BF245A
ON Semiconductort BF245A JFET VHF/UHF Amplifiers BF245B N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc 1 2 Gate–Source Voltage VGS 30 Vdc 3 BF244A, BF244B Drain Current ID 100 mAdc CASE 29–11, STYLE 22 Forward Gate Current IG(f) 10 mAdc TO–92 (TO–226AA) Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Storage Channel Temperature Range Tstg –65 to +150 °C 3 DRAIN 3 DRAIN 1 2 3 BF245, BF245A, 2 1 BF245B, BF245C GATE GATE CASE 29–11, STYLE 23 TO–92 (TO–226AA) STYLE 22 STYLE 23 1 SOURCE 2 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage V(BR)GSS 30 — — Vdc (IG = 1.0 µAdc, VDS = 0) Gate–Source VGS Vdc (VDS = 15 Vdc, ID = 200 µAdc) BF245(1) 0.4 — 7.5 BF245A, BF244A(2) 0.4 — 2.2 BF245B, BF244B 1.6 — 3.8 BF245C 3.2 — 7.5 Gate–Source Cutoff V

See also transistors datasheet: BF1101WR , BF1102 , BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , IRF2807 , BF245B , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A .

Keywords

 BF245A Datasheet  BF245A Datenblatt  BF245A RoHS  BF245A Distributor
 BF245A Application Notes  BF245A Component  BF245A Circuit  BF245A Schematic
 BF245A Equivalent  BF245A Cross Reference  BF245A Data Sheet  BF245A Fiche Technique

 

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