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BF245A MOSFET (IC) Datasheet. Cross Reference Search. BF245A Equivalent

Type Designator: BF245A

Type of BF245A transistor: FET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.35

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.0065

Maximum junction temperature (Tj), °C: 150

Rise Time of BF245A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1.1

Maximum drain-source on-state resistance (Rds), Ohm: 1000

Package: TO92

BF245A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BF245A PDF doc:

1.1. bf245a-bf245b-bf245c_2.pdf Size:67K _philips

BF245A
BF245A

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING • Interchangeability of drain and source connections

1.2. bf245a_bf245b_bf245c_1.pdf Size:97K _philips

BF245A
BF245A

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING • Interchangeability of drain and source connections

1.3. bf245a-b-c.pdf Size:286K _philips

BF245A
BF245A

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 NXP Semiconductors Product specification BF245A; BF245B; N-channel silicon field-effect transistors BF245C FEATURES PINNING ? Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION ? Frequencies up

1.4. bf245a_bf245b_bf245c.pdf Size:24K _fairchild_semi

BF245A
BF245A

BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25°C 350 mW Derate above 25

1.5. bf245a-b.pdf Size:169K _onsemi

BF245A
BF245A

ON Semiconductort BF245A JFET VHF/UHF Amplifiers BF245B N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc 1 2 Gate–Source Voltage VGS 30 Vdc 3 BF244A, BF244B Drain Current ID 100 mAdc CASE 29–11, STYLE 22 Forward Gate Current IG(f) 10 mAdc TO–92 (TO–226AA) Total Device Dissipation @ TA = 25°C PD 350 mW D

See also transistors datasheet: BF1101WR , BF1102 , BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , IRF2807 , BF245B , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A .

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