BF245A MOSFET. Datasheet pdf. Equivalent
Type Designator: BF245A
Type of Transistor: FET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.35 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 0.0065 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 1.1 pF
Maximum Drain-Source On-State Resistance (Rds): 1000 Ohm
Package: TO92
BF245A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF245A PDF doc:
1.1. bf245a-bf245b-bf245c_2.pdf 
Size:67K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING • Interchangeability of drain and source connections
1.2. bf245a_bf245b_bf245c_1.pdf Size:97K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING • Interchangeability of drain and source connections
1.3. bf245a-b-c.pdf Size:286K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 NXP Semiconductors Product specification BF245A; BF245B; N-channel silicon field-effect transistors BF245C FEATURES PINNING ? Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION ? Frequencies up
1.4. bf245a_bf245b_bf245c.pdf Size:24K _fairchild_semi
BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25°C 350 mW Derate above 25
1.5. bf245a-b.pdf Size:169K _onsemi
ON Semiconductort BF245A JFET VHF/UHF Amplifiers BF245B N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc 1 2 Gate–Source Voltage VGS 30 Vdc 3 BF244A, BF244B Drain Current ID 100 mAdc CASE 29–11, STYLE 22 Forward Gate Current IG(f) 10 mAdc TO–92 (TO–226AA) Total Device Dissipation @ TA = 25°C PD 350 mW D
Datasheet: BF1101WR , BF1102 , BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , IRF2807 , BF245B , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A .
