BF245A MOSFET. Datasheet pdf. Equivalent
Type Designator: BF245A
Type of Transistor: FET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.35 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 0.0065 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 1.1 pF
Maximum Drain-Source On-State Resistance (Rds): 1000 Ohm
Package: TO92
BF245A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF245A Datasheet (PDF)
1.1. bf245a-bf245b-bf245c 2.pdf 
Size:67K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING Interchangeability of drain and source connections
1.2. bf245a bf245b bf245c 1.pdf Size:97K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING Interchangeability of drain and source connections
1.3. bf245a-b-c.pdf Size:286K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 NXP Semiconductors Product specification BF245A; BF245B; N-channel silicon field-effect transistors BF245C FEATURES PINNING ? Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION ? Frequencies up
1.4. bf245a bf245b bf245c.pdf Size:24K _fairchild_semi
BF245A/BF245B/BF245C N-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25C 350 mW Derate above 25
1.5. bf245a-b.pdf Size:169K _onsemi
ON Semiconductort BF245A JFET VHF/UHF Amplifiers BF245B NChannel Depletion MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage VDS 30 Vdc DrainGate Voltage VDG 30 Vdc 1 2 GateSource Voltage VGS 30 Vdc 3 BF244A, BF244B Drain Current ID 100 mAdc CASE 2911, STYLE 22 Forward Gate Current IG(f) 10 mAdc TO92 (TO226AA) Total Device Dissipation @ TA = 25C PD 350 mW D
Datasheet: BF1101WR , BF1102 , BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , IRF2807 , BF245B , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A .
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