BF245A Todos los transistores

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING Interchangeability of drain and source connecti

BF245A/BF245B/BF245C N-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25 C 350 mW Derate

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING Interchangeability of drain and source connecti

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 NXP Semiconductors Product specification BF245A; BF245B; N-channel silicon field-effect transistors BF245C FEATURES PINNING Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION Frequenc

ON Semiconductort BF245A JFET VHF/UHF Amplifiers BF245B N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 30 Vdc Drain Gate Voltage VDG 30 Vdc 1 2 Gate Source Voltage VGS 30 Vdc 3 BF244A, BF244B Drain Current ID 100 mAdc CASE 29 11, STYLE 22 Forward Gate Current IG(f) 10 mAdc TO 92 (TO 226AA) Total Device Dissipation @ TA