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BF245A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF245A
   Tipo de FET: FET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.0065 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.25 V
   Cossⓘ - Capacitancia de salida: 1.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1000 Ohm
   Paquete / Cubierta: TO92

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BF245A Datasheet (PDF)

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DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

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BF245A/BF245B/BF245CN-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mAPD Total Device Dissipation @TA=25C 350 mWDerate

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BF245A BF245A

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

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BF245A BF245A

DISCRETE SEMICONDUCTORS DATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effect transistorsProduct specification 1996 Jul 30Supersedes data of April 1995NXP Semiconductors Product specificationBF245A; BF245B;N-channel silicon field-effect transistorsBF245CFEATURES PINNING Interchangeability of drain and source connectionsPIN SYMBOL DESCRIPTION Frequenc

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BF245A BF245A

ON SemiconductortBF245AJFET VHF/UHF AmplifiersBF245BNChannel DepletionMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 30 VdcDrainGate Voltage VDG 30 Vdc12GateSource Voltage VGS 30 Vdc3BF244A, BF244BDrain Current ID 100 mAdcCASE 2911, STYLE 22Forward Gate Current IG(f) 10 mAdcTO92 (TO226AA)Total Device Dissipation @ TA

Otros transistores... BF1101WR , BF1102 , BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , AON7408 , BF245B , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A .

 

 
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