IRF1010E MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF1010E

Type of IRF1010E transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 170

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 81

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF1010E transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.012

Package: TO220AB

Equivalent transistors for IRF1010E

IRF1010E PDF documents for downloads:

1.1. irf1010esl.pdf Size:196K _international_rectifier

PD - 9.1720 IRF1010ES/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature RDS(on) = 0.012? G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D 2 Pak TO-262 possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resi

1.2. irf1010es.pdf Size:123K _international_rectifier

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175°C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m? G Description Advanced HEXFET® Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its D2Pak TO-262 low internal co

1.3. irf1010e.pdf Size:195K _international_rectifier

PD - 91670 IRF1010E HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 84A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

See also transistors datasheet: IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRFB3306 , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N .

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