IRF1010E MOSFET Datasheet: N-Ch, 60V, 84A. Full specification with pinout and replacement list

IRF1010E Specs and Replacement

The IRF1010E is an N-channel power MOSFET designed for high-current, low-loss switching applications. It features a low drain-to-source on-resistance and fast switching behavior, making it suitable for DC-DC converters, motor drives, power supplies, automotive electronics. The device is optimized for operation with standard gate drive voltages and offers good thermal performance when properly heatsinked. Advantages: high current handling capability, low conduction losses, robust avalanche rating, wide availability. Disadvantages: relatively high gate charge compared to modern MOSFETs, which can limit efficiency at very high switching frequencies, sensitivity to static discharge. Design and repair tips: ensure adequate gate drive voltage for full enhancement, use short gate traces and a gate resistor to control ringing, provide sufficient cooling, always check for gate oxide damage when troubleshooting failed units.

   Type Designator: IRF1010E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 84 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220AB

IRF1010E substitution

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IRF1010E datasheet

..1. Size:241K international rectifier
irf1010epbf.pdf pdf_icon

PD - 94965B IRF1010EPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 60V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 12m l Fast Switching G l Fully Avalanche Rated ID = 84A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ... See More ⇒

..2. Size:164K international rectifier
irf1010e.pdf pdf_icon

PD - 9.1670B IRF1010E HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi... See More ⇒

..3. Size:245K inchange semiconductor
irf1010e.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010E IIRF1010E FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM... See More ⇒

0.1. Size:375K international rectifier
auirf1010ezstrl.pdf pdf_icon

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)... See More ⇒