All MOSFET. IRF1010E Datasheet

 

IRF1010E MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1010E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 81 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 130 nC

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO220AB

IRF1010E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF1010E Datasheet (PDF)

1.1. irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf Size:407K _update

IRF1010E
IRF1010E

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5mΩ Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing tech

1.2. irf1010elpbf irf1010espbf.pdf Size:222K _update

IRF1010E
IRF1010E

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET® Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12mΩ l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International ID = 84A‡ S Rectifier utilize advanced pro

 1.3. irf1010epbf.pdf Size:241K _update

IRF1010E
IRF1010E

PD - 94965B IRF1010EPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 12mΩ l Fast Switching G l Fully Avalanche Rated ID = 84A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

1.4. irf1010e.pdf Size:195K _international_rectifier

IRF1010E
IRF1010E

PD - 91670 IRF1010E HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 84A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

 1.5. irf1010esl.pdf Size:196K _international_rectifier

IRF1010E
IRF1010E

PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175C Operating Temperature RDS(on) = 0.012? G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on

1.6. irf1010es.pdf Size:123K _international_rectifier

IRF1010E
IRF1010E

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m? G Description Advanced HEXFET Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achieve extr

Datasheet: IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRFP4227 , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N .

 
Back to Top

 


IRF1010E
  IRF1010E
  IRF1010E
  IRF1010E
 

social 

LIST

Last Update

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
Back to Top