IRF1010E Todos los transistores

 

IRF1010E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1010E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 84 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 130(max) nC

Tiempo de elevación (tr): 78 nS

Conductancia de drenaje-sustrato (Cd): 690 pF

Resistencia drenaje-fuente RDS(on): 0.012 Ohm

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de MOSFET IRF1010E

 

IRF1010E Datasheet (PDF)

..1. irf1010e.pdf Size:195K _international_rectifier

IRF1010E IRF1010E

PD - 91670IRF1010EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 84A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

..2. irf1010e.pdf Size:164K _infineon

IRF1010E IRF1010E

PD - 9.1670BIRF1010EHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi

..3. irf1010e.pdf Size:245K _inchange_semiconductor

IRF1010E IRF1010E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010E IIRF1010EFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.1. irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf Size:407K _international_rectifier

IRF1010E IRF1010E

PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech

0.2. irf1010es.pdf Size:123K _international_rectifier

IRF1010E IRF1010E

PD - 91720IRF1010ESIRF1010EL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL)D 175C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche RatedRDS(on) = 12mGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 84A Rectifier utilize advanced processing techniques toSachi

 0.3. irf1010esl.pdf Size:196K _international_rectifier

IRF1010E IRF1010E

PD - 9.1720IRF1010ES/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175C Operating TemperatureRDS(on) = 0.012G Fast Switching Fully Avalanche RatedID = 83A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

0.4. irf1010elpbf irf1010espbf.pdf Size:222K _international_rectifier

IRF1010E IRF1010E

PD - 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

 

 0.5. auirf1010ezstrl.pdf Size:375K _international_rectifier

IRF1010E IRF1010E

PD - 95962AUTOMOTIVE GRADEAUIRF1010EZAUIRF1010EZSAUIRF1010EZLFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS60V 175C Operating Temperature Fast Switching RDS(on) max.8.5m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited)84A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)

0.6. irf1010epbf.pdf Size:241K _international_rectifier

IRF1010E IRF1010E

PD - 94965BIRF1010EPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 12ml Fast SwitchingGl Fully Avalanche RatedID = 84Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

0.7. irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf Size:407K _infineon

IRF1010E IRF1010E

PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech

0.8. auirf1010ez auirf1010ezs auirf1010ezl.pdf Size:756K _infineon

IRF1010E IRF1010E

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q

0.9. irf1010espbf irf1010elpbf.pdf Size:222K _infineon

IRF1010E IRF1010E

PD - 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

0.10. irf1010es.pdf Size:252K _inchange_semiconductor

IRF1010E IRF1010E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010ESFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

0.11. irf1010ez.pdf Size:245K _inchange_semiconductor

IRF1010E IRF1010E

isc N-Channel MOSFET Transistor IRF1010EZIIRF1010EZFEATURESStatic drain-source on-resistance:RDS(on) 8.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

0.12. irf1010ezs.pdf Size:258K _inchange_semiconductor

IRF1010E IRF1010E

Isc N-Channel MOSFET Transistor IRF1010EZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

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