IRF1010E Todos los transistores

 

IRF1010E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1010E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 170 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 81 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 130 nC

Resistencia drenaje-fuente RDS(on): 0.012 Ohm

Empaquetado / Estuche: TO220AB

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IRF1010E Datasheet (PDF)

1.1. irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf Size:407K _update

IRF1010E
IRF1010E

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5mΩ Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing tech

1.2. irf1010elpbf irf1010espbf.pdf Size:222K _update

IRF1010E
IRF1010E

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET® Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12mΩ l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International ID = 84A‡ S Rectifier utilize advanced pro

 1.3. irf1010epbf.pdf Size:241K _update

IRF1010E
IRF1010E

PD - 94965B IRF1010EPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 12mΩ l Fast Switching G l Fully Avalanche Rated ID = 84A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

1.4. auirf1010ezstrl.pdf Size:375K _update-mosfet

IRF1010E
IRF1010E

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175°C Operating Temperature Fast Switching RDS(on) max. 8.5mΩ Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)

 1.5. irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf Size:407K _international_rectifier

IRF1010E
IRF1010E

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5mΩ Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing tech

1.6. irf1010es.pdf Size:123K _international_rectifier

IRF1010E
IRF1010E

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175°C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12mΩ G Description Advanced HEXFET® Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achi

1.7. irf1010esl.pdf Size:196K _international_rectifier

IRF1010E
IRF1010E

PD - 9.1720 IRF1010ES/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature RDS(on) = 0.012Ω G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

1.8. irf1010elpbf irf1010espbf.pdf Size:222K _international_rectifier

IRF1010E
IRF1010E

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET® Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12mΩ l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International ID = 84A‡ S Rectifier utilize advanced pro

1.9. irf1010e.pdf Size:195K _international_rectifier

IRF1010E
IRF1010E

PD - 91670 IRF1010E HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 12mΩ G Fast Switching Fully Avalanche Rated ID = 84A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

1.10. auirf1010ezstrl.pdf Size:375K _international_rectifier

IRF1010E
IRF1010E

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175°C Operating Temperature Fast Switching RDS(on) max. 8.5mΩ Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)

1.11. irf1010epbf.pdf Size:241K _international_rectifier

IRF1010E
IRF1010E

PD - 94965B IRF1010EPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 12mΩ l Fast Switching G l Fully Avalanche Rated ID = 84A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

1.12. irf1010es.pdf Size:252K _inchange_semiconductor

IRF1010E
IRF1010E

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010ES ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMU

1.13. irf1010ez.pdf Size:245K _inchange_semiconductor

IRF1010E
IRF1010E

isc N-Channel MOSFET Transistor IRF1010EZ,IIRF1010EZ ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

1.14. irf1010ezs.pdf Size:258K _inchange_semiconductor

IRF1010E
IRF1010E

Isc N-Channel MOSFET Transistor IRF1010EZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

1.15. irf1010e.pdf Size:245K _inchange_semiconductor

IRF1010E
IRF1010E

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010E, IIRF1010E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

Otros transistores... IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRFP4227 , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N .

 

 
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