IRF1010E Todos los transistores

 

IRF1010E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1010E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 200 W

Voltaje máximo drenador - fuente |Vds|: 60 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 84 A

Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V

Carga de la puerta (Qg): 130(max) nC

Tiempo de subida (tr): 78 nS

Conductancia de drenaje-sustrato (Cd): 690 pF

Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm

Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRF1010E

 

IRF1010E Datasheet (PDF)

 ..1. Size:195K  international rectifier
irf1010e.pdf

IRF1010E IRF1010E

PD - 91670IRF1010EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 84A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

 ..2. Size:241K  international rectifier
irf1010epbf.pdf

IRF1010E IRF1010E

PD - 94965BIRF1010EPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 12ml Fast SwitchingGl Fully Avalanche RatedID = 84Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

 ..3. Size:164K  infineon
irf1010e.pdf

IRF1010E IRF1010E

PD - 9.1670BIRF1010EHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.012 Fully Avalanche RatedGID = 81A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi

 ..4. Size:245K  inchange semiconductor
irf1010e.pdf

IRF1010E IRF1010E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010E IIRF1010EFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:407K  international rectifier
irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf

IRF1010E IRF1010E

PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech

 0.2. Size:123K  international rectifier
irf1010es.pdf

IRF1010E IRF1010E

PD - 91720IRF1010ESIRF1010EL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL)D 175C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche RatedRDS(on) = 12mGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 84A Rectifier utilize advanced processing techniques toSachi

 0.3. Size:196K  international rectifier
irf1010esl.pdf

IRF1010E IRF1010E

PD - 9.1720IRF1010ES/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175C Operating TemperatureRDS(on) = 0.012G Fast Switching Fully Avalanche RatedID = 83A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

 0.4. Size:222K  international rectifier
irf1010elpbf irf1010espbf.pdf

IRF1010E IRF1010E

PD - 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

 0.5. Size:375K  international rectifier
auirf1010ezstrl.pdf

IRF1010E IRF1010E

PD - 95962AUTOMOTIVE GRADEAUIRF1010EZAUIRF1010EZSAUIRF1010EZLFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS60V 175C Operating Temperature Fast Switching RDS(on) max.8.5m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited)84A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)

 0.6. Size:407K  infineon
irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf

IRF1010E IRF1010E

PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech

 0.7. Size:756K  infineon
auirf1010ez auirf1010ezs auirf1010ezl.pdf

IRF1010E IRF1010E

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q

 0.8. Size:222K  infineon
irf1010espbf irf1010elpbf.pdf

IRF1010E IRF1010E

PD - 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

 0.9. Size:252K  inchange semiconductor
irf1010es.pdf

IRF1010E IRF1010E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010ESFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

 0.10. Size:245K  inchange semiconductor
irf1010ez.pdf

IRF1010E IRF1010E

isc N-Channel MOSFET Transistor IRF1010EZIIRF1010EZFEATURESStatic drain-source on-resistance:RDS(on) 8.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 0.11. Size:258K  inchange semiconductor
irf1010ezs.pdf

IRF1010E IRF1010E

Isc N-Channel MOSFET Transistor IRF1010EZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Otros transistores... IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , 5N60 , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N .

 

 
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