IRF1010E - Даташиты. Аналоги. Основные параметры

PD - 94965B IRF1010EPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 60V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 12m l Fast Switching G l Fully Avalanche Rated ID = 84A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 9.1670B IRF1010E HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010E IIRF1010E FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175 C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m G Description Advanced HEXFET Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achi

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12m l Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 84A S Rectifier utilize advanced pro

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12m l Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 84A S Rectifier utilize advanced pro

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech

PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175 C Operating Temperature RDS(on) = 0.012 G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175 C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q

Isc N-Channel MOSFET Transistor IRF1010EZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010ES FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU

isc N-Channel MOSFET Transistor IRF1010EZ IIRF1010EZ FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a