MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF4905
  IRF4905
  IRF4905
 
IRF4905
  IRF4905
  IRF4905
 
IRF4905
  IRF4905
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NDS355AN
NDS356AP ..NTMFS4833NS
NTMFS4834N ..PHK12NQ03LT
PHK12NQ10T ..PSMN004-60B
PSMN005-30K ..RAF040P01
RAL025P01 ..RJK0223DNS
RJK0225DNS ..RJL5013DPE
RJL5014DPK ..RZR020P01
RZR025P01 ..SFI9640
SFI9644 ..SKP202
SKP253 ..SML4065BN
SML4065CN ..SPB07N60S5
SPB08P06PG ..SSF7N60A
SSF7N80A ..SSM3K03FE
SSM3K03FV ..SSP3N70
SSP3N70A ..STB45NF06
STB4N62K3 ..STD5NM50
STD5NM50-1 ..STH26N25FI
STH270N4F3-6 ..STP11NM80
STP120N4F6 ..STP50N06FI
STP50N06L ..STT3585
STT3599C ..SUN1060F
SUN1060I2 ..TK65A10N1
TK65E10N1 ..TPCA8003-H
TPCA8004-H ..UF460
UF4N20 ..VKM60-01P1
VMK165-007T ..ZXMN3A06DN8
ZXMN3A14F ..ZXMS6006SG
 
IRF4905 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF4905 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF4905

Type of IRF4905 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 64

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF4905 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.02

Package: TO220AB

Equivalent transistors for IRF4905

IRF4905 PDF doc:

1.1. irf4905s.pdf Size:163K _international_rectifier

IRF4905
IRF4905
PD - 9.1478A IRF4905S/L HEXFET« Power MOSFET Advanced Process Technology D Surface Mount (IRF4905S) VDSS = -55V Low-profile through-hole (IRF4905L) 175░C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal

1.2. irf4905.pdf Size:108K _international_rectifier

IRF4905
IRF4905
PD - 9.1280C IRF4905 HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @

See also transistors datasheet: IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , 2N5485 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 .

Keywords

 IRF4905 Datasheet  IRF4905 Datenblatt  IRF4905 RoHS  IRF4905 Distributor
 IRF4905 Application Notes  IRF4905 Component  IRF4905 Circuit  IRF4905 Schematic
 IRF4905 Equivalent  IRF4905 Cross Reference  IRF4905 Data Sheet  IRF4905 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages