MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF4905
  IRF4905
  IRF4905
 
IRF4905
  IRF4905
  IRF4905
 
IRF4905
  IRF4905
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF36N60N
FCPF380N60 ..FDD1600N10ALZ
FDD1600N10ALZD ..FDMA8051L
FDMA86265P ..FDMS8460
FDMS8558S ..FDPF18N20FT
FDPF18N20FT_G ..FDT439N
FDT457N ..FQD12N20L
FQD12N20LTM_F085 ..FQT1N60C
FQT1N80 ..FSF055D
FSF055R ..H5N5006LS
H5N5007P ..HAT2165N
HAT2166H ..HUF75639S_F085A
HUF75645P3 ..IPB072N15N3G
IPB075N04LG ..IPD50N03S2-07
IPD50N03S2L-06 ..IPP037N06L3G
IPP037N08N3G ..IPW60R075CP
IPW60R075CPA ..IRF3703
IRF3704Z ..IRF6641
IRF6643 ..IRF7523D1
IRF7524D1 ..IRF9Z14S
IRF9Z15 ..IRFH7936
IRFH8318 ..IRFP250N
IRFP251 ..IRFR9024
IRFR9024N ..IRFS9530
IRFS9531 ..IRFY430
IRFY430C ..IRLI510A
IRLI520A ..IRLZ30
IRLZ34 ..IXFH28N50Q
IXFH28N60P3 ..IXFL60N80P
IXFL70N60Q2 ..IXFR24N80P
IXFR24N90P ..IXFX250N10P
IXFX25N90 ..IXTA76P10T
IXTA7N60P ..IXTH6N150
IXTH6N50D2 ..IXTP32P05T
IXTP32P20T ..IXTT74N20P
IXTT75N10 ..KF3N80I
KF4N20LD ..KP504E
KP504G ..MCH6445
MCH6448 ..MTBB5B10Q8
MTBB5N10L3 ..MTN3820J3
MTN3K01N3 ..NDB6050L
NDB6051 ..NTD5407N
NTD5413N ..NVMFS4841N
NVTFS4823N ..PMBFJ211
PMBFJ212 ..PSMN4R0-40YS
PSMN4R1-30YLC ..RFD4N06L
RFD4N06LSM ..RJK1028DPA
RJK1028DSP ..RSD140P06
RSD150N06 ..SDF18N50
SDF1NA60JAA ..SFU9034
SFU9110 ..SMG5409
SMK0160 ..SML50L47
SML50M60BFN ..SPD02N80C3
SPD03N50C3 ..SSG4435
SSG4436N ..SSM3K124TU
SSM3K126TU ..SSP6N90A
SSP70N10A ..STB55NF03L
STB55NF06 ..STD5NK52ZD
STD5NK60Z ..STFI10NK60Z
STFI13NK60Z ..STLT30
STM101N ..STP20NF20
STP20NK50Z ..STP6N62K3
STP6N95K5 ..STT3414
STT3418 ..STV7NA60
STV8NA50 ..TK13A45D
TK13A50D ..TPC8014
TPC8016-H ..TPCC8009
TPCC8061-H ..UT40N04
UT4232 ..ZVN3320F
ZVN4106F ..ZXMS6006SG
 
IRF4905 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF4905 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF4905

Type of IRF4905 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 64

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF4905 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.02

Package: TO220AB

Equivalent transistors for IRF4905

IRF4905 PDF doc:

1.1. irf4905s.pdf Size:163K _international_rectifier

IRF4905
IRF4905
PD - 9.1478A IRF4905S/L HEXFET« Power MOSFET Advanced Process Technology D Surface Mount (IRF4905S) VDSS = -55V Low-profile through-hole (IRF4905L) 175░C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal

1.2. irf4905.pdf Size:108K _international_rectifier

IRF4905
IRF4905
PD - 9.1280C IRF4905 HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @

See also transistors datasheet: IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , 2N5485 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 .

Keywords

 IRF4905 Datasheet  IRF4905 Datenblatt  IRF4905 RoHS  IRF4905 Distributor
 IRF4905 Application Notes  IRF4905 Component  IRF4905 Circuit  IRF4905 Schematic
 IRF4905 Equivalent  IRF4905 Cross Reference  IRF4905 Data Sheet  IRF4905 Fiche Technique

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