IRF4905 - Даташиты. Аналоги. Основные параметры

PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.02 Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

PD - 94816 IRF4905PbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.02 G P-Channel Fully Avalanche Rated ID = -74A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

IRF4905PBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.019 at VGS = - 10 V - 53 APPLICATIONS - 60 38 nC 0.026 at VGS = - 4.5 V - 42 Load Switch TO-220AB S G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) P

isc P-Channel MOSFET Transistor IRF4905,IIRF4905 FEATURES Static drain-source on-resistance RDS(on) 0.02 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliab

PD - 97034 IRF4905SPbF IRF4905LPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V 150 C Operating Temperature Fast Switching RDS(on) = 20m Repetitive Avalanche Allowed up to Tjmax G Some Parameters Are Differrent from ID = -42A IRF4905S S Lead-Free D D Description Features of this design are a 150 C junction oper

PD - 97034 IRF4905SPbF IRF4905LPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V 150 C Operating Temperature Fast Switching RDS(on) = 20m Repetitive Avalanche Allowed up to Tjmax G Some Parameters Are Differrent from ID = -42A IRF4905S S Lead-Free D D Description Features of this design are a 150 C junction oper

PD - 9.1478A IRF4905S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF4905S) VDSS = -55V Low-profile through-hole (IRF4905L) 175 C Operating Temperature RDS(on) = 0.02 Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

AUTOMOTIVE GRADE AUIRF4905 HEXFET Power MOSFET Features Advanced Planar Technology VDSS -55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.02 175 C Operating Temperature Fast Switching ID -74A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S D

AUIRF4905S AUTOMOTIVE GRADE AUIRF4905L HEXFET Power MOSFET Features VDSS -55V Advanced Planar Technology P-Channel MOSFET RDS(on) max. 20m Low On-Resistance ID (Silicon Limited) -70A 150 C Operating Temperature Fast Switching ID (Package Limited) -42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D