Справочник MOSFET. IRF4905

 

IRF4905 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF4905
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 200 W
   Предельно допустимое напряжение сток-исток |Uds|: 55 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 74 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 180(max) nC
   Время нарастания (tr): 99 ns
   Выходная емкость (Cd): 1400 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRF4905

 

 

IRF4905 Datasheet (PDF)

 ..1. Size:181K  international rectifier
irf4905pbf.pdf

IRF4905 IRF4905

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

 ..2. Size:108K  international rectifier
irf4905.pdf

IRF4905 IRF4905

PD - 9.1280CIRF4905HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

 ..3. Size:181K  infineon
irf4905pbf.pdf

IRF4905 IRF4905

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

 ..4. Size:1522K  cn vbsemi
irf4905pbf.pdf

IRF4905 IRF4905

IRF4905PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

 ..5. Size:241K  inchange semiconductor
irf4905.pdf

IRF4905 IRF4905

isc P-Channel MOSFET Transistor IRF4905,IIRF4905FEATURESStatic drain-source on-resistance:RDS(on)0.02Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

 0.1. Size:361K  international rectifier
irf4905lpbf irf4905spbf.pdf

IRF4905 IRF4905

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

 0.2. Size:163K  international rectifier
irf4905s.pdf

IRF4905 IRF4905

PD - 9.1478AIRF4905S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF4905S)VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 0.3. Size:615K  infineon
auirf4905s auirf4905l.pdf

IRF4905 IRF4905

AUIRF4905S AUTOMOTIVE GRADE AUIRF4905L HEXFET Power MOSFET Features VDSS -55V Advanced Planar Technology P-Channel MOSFET RDS(on) max. 20m Low On-Resistance ID (Silicon Limited) -70A 150C Operating Temperature Fast Switching ID (Package Limited) -42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D

 0.4. Size:347K  infineon
auirf4905.pdf

IRF4905 IRF4905

AUTOMOTIVE GRADE AUIRF4905 HEXFET Power MOSFET Features Advanced Planar Technology VDSS -55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.02 175C Operating Temperature Fast Switching ID -74A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S D

 0.5. Size:361K  infineon
irf4905spbf irf4905lpbf.pdf

IRF4905 IRF4905

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

Другие MOSFET... IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , MDF11N65B , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 .

 

 
Back to Top