PD - 9.1280CIRF4905HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

IRF4905PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

isc P-Channel MOSFET Transistor IRF4905,IIRF4905FEATURESStatic drain-source on-resistance:RDS(on)0.02Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

PD - 9.1478AIRF4905S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF4905S)VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

AUTOMOTIVE GRADE AUIRF4905 HEXFET Power MOSFET Features Advanced Planar Technology VDSS -55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.02 175C Operating Temperature Fast Switching ID -74A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S D

AUIRF4905S AUTOMOTIVE GRADE AUIRF4905L HEXFET Power MOSFET Features VDSS -55V Advanced Planar Technology P-Channel MOSFET RDS(on) max. 20m Low On-Resistance ID (Silicon Limited) -70A 150C Operating Temperature Fast Switching ID (Package Limited) -42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D