IRF4905 Todos los transistores

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IRF4905 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF4905

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 64 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.02 Ohm

Empaquetado / Estuche: TO220AB

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IRF4905 Datasheet (PDF)

1.1. irf4905.pdf Size:108K _international_rectifier

IRF4905
IRF4905

PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

1.2. irf4905s.pdf Size:163K _international_rectifier

IRF4905
IRF4905

PD - 9.1478A IRF4905S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF4905S) VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

 1.3. irf4905lpbf irf4905spbf.pdf Size:361K _international_rectifier

IRF4905
IRF4905

PD - 97034 IRF4905SPbF IRF4905LPbF Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V 150°C Operating Temperature Fast Switching RDS(on) = 20mΩ Repetitive Avalanche Allowed up to Tjmax G Some Parameters Are Differrent from ID = -42A IRF4905S S Lead-Free D D Description Features of this design are a 150°C junction oper

1.4. irf4905pbf.pdf Size:181K _international_rectifier

IRF4905
IRF4905

PD - 94816 IRF4905PbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.02Ω G P-Channel Fully Avalanche Rated ID = -74A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

Otros transistores... IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , 2N5485 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 .

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AM2398NE | AM2398N | AM2394NE | AM2392N | AM2391P | AM2390N | AM2381P | AM2374N | AM2373P | AM2372N | AM2371P | AM2370N | AM2362N | AM2361P | AM2360N |

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