IRF4905 PDF and Equivalents Search

 

IRF4905 PDF Specs and Replacement

The IRF4905 is a rugged P-channel power MOSFET designed for high-current, low-voltage switching applications. Built with advanced MOSFET technology, it features a low on-resistance of approximately 0.02Ohm at Vgs=10V, enabling efficient power delivery with minimal conduction losses. Its drain-source voltage rating is 55V, making it suitable for automotive, DC motor control, battery-powered systems. The device supports continuous drain currents up to 74A when properly heat-sunk and offers fast switching characteristics due to its low gate charge. This reduces switching losses and improves efficiency in high-frequency circuits. The TO220 package ensures good thermal performance and ease of integration. As a high-power P-channel option, the IRF4905 remains a reliable choice for reverse-polarity protection, high-side switching, robust power management designs.


   Type Designator: IRF4905
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 74 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220AB
 

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IRF4905 PDF Specs

 ..1. Size:108K  international rectifier
irf4905.pdf pdf_icon

IRF4905

PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.02 Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-... See More ⇒

 ..2. Size:181K  international rectifier
irf4905pbf.pdf pdf_icon

IRF4905

PD - 94816 IRF4905PbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.02 G P-Channel Fully Avalanche Rated ID = -74A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre... See More ⇒

 ..3. Size:1522K  cn vbsemi
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IRF4905

IRF4905PBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.019 at VGS = - 10 V - 53 APPLICATIONS - 60 38 nC 0.026 at VGS = - 4.5 V - 42 Load Switch TO-220AB S G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) P... See More ⇒

 ..4. Size:241K  inchange semiconductor
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IRF4905

isc P-Channel MOSFET Transistor IRF4905,IIRF4905 FEATURES Static drain-source on-resistance RDS(on) 0.02 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliab... See More ⇒

Detailed specifications: IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF9640 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 .

Keywords - IRF4905 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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