All MOSFET. IRF4905 Datasheet

 

IRF4905 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF4905

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 64 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 120 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO220AB

IRF4905 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF4905 Datasheet (PDF)

1.1. irf4905.pdf Size:108K _international_rectifier

IRF4905
IRF4905

PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

1.2. irf4905s.pdf Size:163K _international_rectifier

IRF4905
IRF4905

PD - 9.1478A IRF4905S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF4905S) VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating Temperature RDS(on) = 0.02? Fast Switching G P-Channel ID = -74A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

 1.3. irf4905lpbf irf4905spbf.pdf Size:361K _international_rectifier

IRF4905
IRF4905

PD - 97034 IRF4905SPbF IRF4905LPbF Features HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V 150°C Operating Temperature Fast Switching RDS(on) = 20mΩ Repetitive Avalanche Allowed up to Tjmax G Some Parameters Are Differrent from ID = -42A IRF4905S S Lead-Free D D Description Features of this design are a 150°C junction oper

1.4. irf4905pbf.pdf Size:181K _international_rectifier

IRF4905
IRF4905

PD - 94816 IRF4905PbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.02Ω G P-Channel Fully Avalanche Rated ID = -74A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

Datasheet: IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , 2N5485 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 .

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