MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF540N
  IRF540N
  IRF540N
 
IRF540N
  IRF540N
  IRF540N
 
IRF540N
  IRF540N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7669L2TR
AUIRF7675M2 ..BF1201
BF1201R ..BLF6G10-200RN
BLF6G10-45 ..BSC032N03SG
BSC034N03LSG ..BSS83
BSS83P ..BUK7105-40ATE
BUK7107-40ATC ..BUK9514-30
BUK9514-55 ..BUZ80FI
BUZ90 ..CED6601
CED6861 ..CEP14G04
CEP14N5 ..DMB54D0UDW
DMB54D0UDW ..DMP3130L
DMP3160L ..FDB035N10A
FDB039N06 ..FDD4141
FDD4141_F085 ..FDMC3020DC
FDMC3020DC ..FDN359AN
FDN359BN ..FDS2672
FDS2672_F085 ..FDT86102LZ
FDT86102LZ ..FQB8N60C
FQB8P10 ..FQPF2N80
FQPF2N80 ..FRM9140H
FRM9140R ..H05N60F
H06N60E ..HAT1132R
HAT1139H ..HN4K03JU
HP4410DY ..IPA60R450E6
IPA60R520C6 ..IPD031N06L3G
IPD034N06N3G ..IPI50R380CE
IPI50R399CP ..IPP80N03S4L-04
IPP80N04S2-04 ..IRF1405ZS
IRF1405ZS-7P ..IRF630A
IRF630FI ..IRF7404Q
IRF7406 ..IRF9335
IRF9358 ..IRFE9110
IRFE9120 ..IRFN140
IRFN150 ..IRFR1N60A
IRFR210 ..IRFS640
IRFS640A ..IRFU9010
IRFU9012 ..IRL541
IRL5602S ..IRLU110A
IRLU120A ..IXFH13N50
IXFH13N80 ..IXFK44N50F
IXFK44N50P ..IXFP12N50PM
IXFP130N10T ..IXFV18N60PS
IXFV18N90P ..IXTA220N055T7
IXTA220N075T ..IXTH31N15MA
IXTH31N15MB ..IXTP15N25MB
IXTP15N30MA ..IXTR170P10P
IXTR200N10P ..JANSR2N7272
JANSR2N7275 ..KMB2D0N60SA
KMB3D0P30SA ..KU054N03D
KU056N03Q ..MTB20N03Q8
MTB20N06J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA4001N
NTA4151P ..NTMS5838NL
NTMS5P02 ..PHP50N03LT
PHP50N06LT ..PSMN045-80YS
PSMN050-80PS ..RF1K49093
RF1K49154 ..RJK0391DPA
RJK0392DPA ..RQA0009SXAQS
RQA0009TXDQS ..SDF10N100JED
SDF10N100SXH ..SFS9630
SFS9634 ..SMG2390N
SMG2391P ..SML50B22
SML50B26 ..SPD50P03LG
SPI07N60C3 ..SSG4842N
SSG4874N ..SSM3K310T
SSM3K311T ..SSPS7332N
SSPS7333P ..STB9NK60ZD
STB9NK70Z-1 ..STD90N03L
STD90N03L-1 ..STHV82FI
STI10N62K3 ..STP17NK40ZFP
STP180N10F3 ..STP60N05FI
STP60N06 ..STV18N20
STV240N75F3 ..TJ40S04M3L
TJ50S06M3L ..TK9A55DA
TK9A60D ..TPCA8064-H
TPCA8065-H ..UT2305
UT2305A ..WTK6680
WTK9410 ..ZXMP3F36N8
ZXMP3F37DN8 ..ZXMS6006SG
 
IRF540N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF540N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF540N

Type of IRF540N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 140

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 33

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF540N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO220AB

Equivalent transistors for IRF540N

IRF540N PDF doc:

1.1. irf540n.pdf Size:99K _international_rectifier

IRF540N
IRF540N
PD - 91341B IRF540N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

1.2. irf540ns.pdf Size:125K _international_rectifier

IRF540N
IRF540N
PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipat

4.1. irf540.rev3.2.pdf Size:142K _motorola

IRF540N
IRF540N
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET.? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.070 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor ? controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified D • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperatur

4.2. irf540_mot.pdf Size:144K _motorola

IRF540N
IRF540N
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET.? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.077 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, ? these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage tran- sients. • Avalanche Energy Specified D • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperat

4.3. irf540_s_1.pdf Size:88K _philips

IRF540N
IRF540N
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 23 A g RDS(ON) ? 77 m? s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • switched mode power supplies • T.V. and computer monitor power supplies The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 175?C - 100 V VDGR Drain-gate

4.4. irf540.pdf Size:53K _st

IRF540N
IRF540N
IRF540 IRF540FI N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V < 0.077 ? 30 A IRF540FI 100 V < 0.077 ? 16 A TYPICAL R = 0.050 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 TO-220FI APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTER INTERNAL SCHEMATIC DIAGRAM AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF530 IRF530FI VDS Drain-source Voltage (VGS = 0) 100 V VDGR 100 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C30 A 17 o I Drain Current (continuous) at T = 100 C21 A 12 D c I (•) Drain Current (pulsed) 120 120 A DM o Ptot Tota

4.5. irf540-1-2-3-fi.pdf Size:481K _st2

IRF540N
IRF540N
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4.6. irf540a.pdf Size:256K _fairchild_semi

IRF540N
IRF540N
IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) C 28 ID A ? Continuous Drain Current (TC=100 ) C 19.8 IDM Drain Current-Pulsed 1 110 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 523 mJ O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O ? Total Power Dissipation (TC=25 ) W C 107 PD ? Linear Derating Factor 0.71 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature

4.7. irf540.pdf Size:146K _fairchild_semi

IRF540N
IRF540N

4.8. irf540spbf.pdf Size:1411K _international_rectifier

IRF540N
IRF540N
PD- 95983 IRF540SPbF • Lead-Free 12/21/04 Document Number: 91022 www.vishay.com 1 IRF540SPbF Document Number: 91022 www.vishay.com 2 IRF540SPbF Document Number: 91022 www.vishay.com 3 IRF540SPbF Document Number: 91022 www.vishay.com 4 IRF540SPbF Document Number: 91022 www.vishay.com 5 IRF540SPbF Document Number: 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD R

4.9. irf540z.pdf Size:173K _international_rectifier

IRF540N
IRF540N
PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5m? 175°C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C 34 A Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 24 Continuous Drain Current, VGS @ 10V (See Fig. 9) I

4.10. irf540pbf.pdf Size:1312K _international_rectifier

IRF540N
IRF540N
PD - 94848 IRF540PbF • Lead-Free 11/17/03 Document Number: 91021 www.vishay.com 1 IRF540PbF Document Number: 91021 www.vishay.com 2 IRF540PbF Document Number: 91021 www.vishay.com 3 IRF540PbF Document Number: 91021 www.vishay.com 4 IRF540PbF Document Number: 91021 www.vishay.com 5 IRF540PbF Document Number: 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.11. irf540s.pdf Size:184K _international_rectifier

IRF540N
IRF540N

4.12. irf540.pdf Size:177K _international_rectifier

IRF540N
IRF540N

4.13. irf540a.pdf Size:951K _samsung

IRF540N
IRF540N
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 28 ID A ? Continuous Drain Current (TC=100 ) 19.8 1 IDM Drain Current-Pulsed A 110 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 523 O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 107 W PD ? Linear Derating Factor W/ 0.71 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp

4.14. irf540_sihf540.pdf Size:202K _vishay

IRF540N
IRF540N
IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.077 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF540PbF Lead (Pb)-free SiHF540-E3

See also transistors datasheet: IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRFB3306 , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A .

Keywords

 IRF540N Datasheet  IRF540N Datenblatt  IRF540N RoHS  IRF540N Distributor
 IRF540N Application Notes  IRF540N Component  IRF540N Circuit  IRF540N Schematic
 IRF540N Equivalent  IRF540N Cross Reference  IRF540N Data Sheet  IRF540N Fiche Technique

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