MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF540N
  IRF540N
  IRF540N
 
IRF540N
  IRF540N
  IRF540N
 
IRF540N
  IRF540N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NDS355AN
NDS356AP ..NTMFS4833NS
NTMFS4834N ..PHK12NQ03LT
PHK12NQ10T ..PSMN004-60B
PSMN005-30K ..RAF040P01
RAL025P01 ..RJK0223DNS
RJK0225DNS ..RJL5013DPE
RJL5014DPK ..RZR020P01
RZR025P01 ..SFI9640
SFI9644 ..SKP202
SKP253 ..SML4065BN
SML4065CN ..SPB07N60S5
SPB08P06PG ..SSF7N60A
SSF7N80A ..SSM3K03FE
SSM3K03FV ..SSP3N70
SSP3N70A ..STB45NF06
STB4N62K3 ..STD5NM50
STD5NM50-1 ..STH26N25FI
STH270N4F3-6 ..STP11NM80
STP120N4F6 ..STP50N06FI
STP50N06L ..STT3585
STT3599C ..SUN1060F
SUN1060I2 ..TK65A10N1
TK65E10N1 ..TPCA8003-H
TPCA8004-H ..UF460
UF4N20 ..VKM60-01P1
VMK165-007T ..ZXMN3A06DN8
ZXMN3A14F ..ZXMS6006SG
 
IRF540N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF540N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF540N

Type of IRF540N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 140

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 33

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF540N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO220AB

Equivalent transistors for IRF540N

IRF540N PDF doc:

1.1. irf540n.pdf Size:99K _international_rectifier

IRF540N
IRF540N
PD - 91341B IRF540N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

1.2. irf540ns.pdf Size:125K _international_rectifier

IRF540N
IRF540N
PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipat

4.1. irf540.rev3.2.pdf Size:142K _motorola

IRF540N
IRF540N
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET.? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.070 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor ? controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified D • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperatur

4.2. irf540_mot.pdf Size:144K _motorola

IRF540N
IRF540N
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET.? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.077 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, ? these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage tran- sients. • Avalanche Energy Specified D • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperat

4.3. irf540_s_1.pdf Size:88K _philips

IRF540N
IRF540N
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 23 A g RDS(ON) ? 77 m? s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • switched mode power supplies • T.V. and computer monitor power supplies The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 175?C - 100 V VDGR Drain-gate

4.4. irf540.pdf Size:53K _st

IRF540N
IRF540N
IRF540 IRF540FI N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V < 0.077 ? 30 A IRF540FI 100 V < 0.077 ? 16 A TYPICAL R = 0.050 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 TO-220FI APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTER INTERNAL SCHEMATIC DIAGRAM AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF530 IRF530FI VDS Drain-source Voltage (VGS = 0) 100 V VDGR 100 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C30 A 17 o I Drain Current (continuous) at T = 100 C21 A 12 D c I (•) Drain Current (pulsed) 120 120 A DM o Ptot Tota

4.5. irf540-1-2-3-fi.pdf Size:481K _st2

IRF540N
IRF540N
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4.6. irf540a.pdf Size:256K _fairchild_semi

IRF540N
IRF540N
IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) C 28 ID A ? Continuous Drain Current (TC=100 ) C 19.8 IDM Drain Current-Pulsed 1 110 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 523 mJ O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O ? Total Power Dissipation (TC=25 ) W C 107 PD ? Linear Derating Factor 0.71 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature

4.7. irf540.pdf Size:146K _fairchild_semi

IRF540N
IRF540N

4.8. irf540spbf.pdf Size:1411K _international_rectifier

IRF540N
IRF540N
PD- 95983 IRF540SPbF • Lead-Free 12/21/04 Document Number: 91022 www.vishay.com 1 IRF540SPbF Document Number: 91022 www.vishay.com 2 IRF540SPbF Document Number: 91022 www.vishay.com 3 IRF540SPbF Document Number: 91022 www.vishay.com 4 IRF540SPbF Document Number: 91022 www.vishay.com 5 IRF540SPbF Document Number: 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD R

4.9. irf540z.pdf Size:173K _international_rectifier

IRF540N
IRF540N
PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5m? 175°C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C 34 A Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 24 Continuous Drain Current, VGS @ 10V (See Fig. 9) I

4.10. irf540pbf.pdf Size:1312K _international_rectifier

IRF540N
IRF540N
PD - 94848 IRF540PbF • Lead-Free 11/17/03 Document Number: 91021 www.vishay.com 1 IRF540PbF Document Number: 91021 www.vishay.com 2 IRF540PbF Document Number: 91021 www.vishay.com 3 IRF540PbF Document Number: 91021 www.vishay.com 4 IRF540PbF Document Number: 91021 www.vishay.com 5 IRF540PbF Document Number: 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.11. irf540s.pdf Size:184K _international_rectifier

IRF540N
IRF540N

4.12. irf540.pdf Size:177K _international_rectifier

IRF540N
IRF540N

4.13. irf540a.pdf Size:951K _samsung

IRF540N
IRF540N
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 28 ID A ? Continuous Drain Current (TC=100 ) 19.8 1 IDM Drain Current-Pulsed A 110 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 523 O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 107 W PD ? Linear Derating Factor W/ 0.71 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp

4.14. irf540_sihf540.pdf Size:202K _vishay

IRF540N
IRF540N
IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.077 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF540PbF Lead (Pb)-free SiHF540-E3

See also transistors datasheet: IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRFB3306 , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A .

Keywords

 IRF540N Datasheet  IRF540N Datenblatt  IRF540N RoHS  IRF540N Distributor
 IRF540N Application Notes  IRF540N Component  IRF540N Circuit  IRF540N Schematic
 IRF540N Equivalent  IRF540N Cross Reference  IRF540N Data Sheet  IRF540N Fiche Technique

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