MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF540N
  IRF540N
  IRF540N
  IRF540N
 
IRF540N
  IRF540N
  IRF540N
  IRF540N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..K4059
K596 ..KMB7D0DN40QB
KMB7D0N40QA ..LKK47-06C5
LS3954 ..MTB40P04J3
MTB40P06J3 ..MTN2572F3
MTN2572FP ..MTP6N60
MTP7425Q8 ..NTD20N06L
NTD20P06L ..NTR4503N
NTS2101P ..PHT6N06T
PHT6NQ10T ..PSMN1R5-25YL
PSMN1R5-30YL ..RF1S60P03SM
RF1S630SM ..RJK03E7DPA
RJK03E8DPA ..RQK0201QGDQA
RQK0202RGDQA ..SDF100NA40HI
SDF100NA40JD ..SFR9014
SFR9024 ..SMG2310N
SMG2314N ..SML40M42BFN
SML40M80AFN ..SPA11N60CFD
SPA11N65C3 ..SSE70N10-44P
SSE90N04-03P ..SSM3J305T
SSM3J306T ..SSM6P15FE
SSM6P15FU ..STB200N6F3
STB200NF03 ..STD3N30-1
STD3N30L ..STF2HNK60Z
STF2N62K3 ..STK9N10
STL100N1VH5 ..STP14NM50N
STP14NM65N ..STP5N50FI
STP5N52K3 ..STS4DPF30L
STS4NF100 ..STU622S
STU624S ..TF256TH
TF408 ..TK80X04K3
TK8A10K3 ..TPCA8048-H
TPCA8049-H ..UP9T15G
URFP150 ..WTC2306
WTC2312 ..ZXMP10A17G
ZXMP10A17K ..ZXMS6006SG
 
IRF540N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF540N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF540N

Type of IRF540N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 140

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 33

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF540N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO220AB

Equivalent transistors for IRF540N - Cross-Reference Search

IRF540N PDF doc:

1.1. irf540n.pdf Size:99K _international_rectifier

IRF540N
IRF540N
PD - 91341B IRF540N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

1.2. irf540ns.pdf Size:125K _international_rectifier

IRF540N
IRF540N
PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipat

4.1. irf540.rev3.2.pdf Size:142K _motorola

IRF540N
IRF540N
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET.? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.070 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor ? controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified D • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperatur

4.2. irf540_mot.pdf Size:144K _motorola

IRF540N
IRF540N
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET.? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.077 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, ? these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage tran- sients. • Avalanche Energy Specified D • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperat

4.3. irf540_s_1.pdf Size:88K _philips

IRF540N
IRF540N
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 23 A g RDS(ON) ? 77 m? s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • switched mode power supplies • T.V. and computer monitor power supplies The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 175?C - 100 V VDGR Drain-gate

4.4. irf540.pdf Size:53K _st

IRF540N
IRF540N
IRF540 IRF540FI N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V < 0.077 ? 30 A IRF540FI 100 V < 0.077 ? 16 A TYPICAL R = 0.050 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 TO-220FI APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTER INTERNAL SCHEMATIC DIAGRAM AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF530 IRF530FI VDS Drain-source Voltage (VGS = 0) 100 V VDGR 100 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C30 A 17 o I Drain Current (continuous) at T = 100 C21 A 12 D c I (•) Drain Current (pulsed) 120 120 A DM o Ptot Tota

4.5. irf540-1-2-3-fi.pdf Size:481K _st2

IRF540N
IRF540N
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4.6. irf540a.pdf Size:256K _fairchild_semi

IRF540N
IRF540N
IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) C 28 ID A ? Continuous Drain Current (TC=100 ) C 19.8 IDM Drain Current-Pulsed 1 110 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 523 mJ O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O ? Total Power Dissipation (TC=25 ) W C 107 PD ? Linear Derating Factor 0.71 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature

4.7. irf540_rf1s540sm.pdf Size:112K _fairchild_semi

IRF540N
IRF540N
IRF540, RF1S540SM Data Sheet January 2002 28A, 100V, 0.077 Ohm, N-Channel Power Features MOSFETs • 28A, 100V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.077Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode • Nanosecond Switching Speeds of operation. All of these power MOSFETs are designed for • Linear Transfer Characteristics applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high • High Input Impedance power bipolar switching transistors requiring high speed and • Related Literature low gate drive power. These types can be operated directly - TB334 “Guidelines for Soldering Surface Mount from integrated circuits. Components to PC Boards” Formerly developmental type TA17421. Symbol Ordering In

4.8. irf540.pdf Size:146K _fairchild_semi

IRF540N
IRF540N

4.9. irf540spbf.pdf Size:1411K _international_rectifier

IRF540N
IRF540N
PD- 95983 IRF540SPbF • Lead-Free 12/21/04 Document Number: 91022 www.vishay.com 1 IRF540SPbF Document Number: 91022 www.vishay.com 2 IRF540SPbF Document Number: 91022 www.vishay.com 3 IRF540SPbF Document Number: 91022 www.vishay.com 4 IRF540SPbF Document Number: 91022 www.vishay.com 5 IRF540SPbF Document Number: 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD R

4.10. irf540z.pdf Size:173K _international_rectifier

IRF540N
IRF540N
PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5m? 175°C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C 34 A Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 24 Continuous Drain Current, VGS @ 10V (See Fig. 9) I

4.11. irf540pbf.pdf Size:1312K _international_rectifier

IRF540N
IRF540N
PD - 94848 IRF540PbF • Lead-Free 11/17/03 Document Number: 91021 www.vishay.com 1 IRF540PbF Document Number: 91021 www.vishay.com 2 IRF540PbF Document Number: 91021 www.vishay.com 3 IRF540PbF Document Number: 91021 www.vishay.com 4 IRF540PbF Document Number: 91021 www.vishay.com 5 IRF540PbF Document Number: 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.12. irf540s.pdf Size:184K _international_rectifier

IRF540N
IRF540N

4.13. irf540.pdf Size:177K _international_rectifier

IRF540N
IRF540N

4.14. irf540a.pdf Size:951K _samsung

IRF540N
IRF540N
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 28 ID A ? Continuous Drain Current (TC=100 ) 19.8 1 IDM Drain Current-Pulsed A 110 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 523 O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 107 W PD ? Linear Derating Factor W/ 0.71 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp

4.15. irf540_sihf540.pdf Size:202K _vishay

IRF540N
IRF540N
IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.077 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF540PbF Lead (Pb)-free SiHF540-E3

See also transistors datasheet: IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRFB3306 , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A .

Keywords

 IRF540N Datasheet  IRF540N Datenblatt  IRF540N RoHS  IRF540N Distributor
 IRF540N Application Notes  IRF540N Component  IRF540N Circuit  IRF540N Schematic
 IRF540N Equivalent  IRF540N Cross Reference  IRF540N Data Sheet  IRF540N Fiche Technique

 

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