MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF540N
  IRF540N
  IRF540N
 
IRF540N
  IRF540N
  IRF540N
 
IRF540N
  IRF540N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP09N20H-HF
AP09N20J-HF ..AP2732GK
AP2761I-A ..AP4513GH-A
AP4513GM-HF ..AP85U03GH-HF
AP85U03GM-HF ..AP95T08GP
AP95T10AGI-HF ..APT1003R5BN
APT1003R5CN ..AUIRF1324S
AUIRF1324S-7P ..AUIRL1404Z
AUIRL1404ZL ..BFL4001
BFL4004 ..BLS6G2731S-120
BLS6G2731S-130 ..BSO303PH
BSO303SPH ..BUK545-100A
BUK545-100B ..BUK7908-40AIE
BUK7909-75AIE ..BUP67
BUP68 ..CEB84A4
CEB85A3 ..CEM6188
CEM6426 ..CEU4204
CEU4269 ..DMN5L06DWK
DMN5L06K ..FCH76N60NF
FCI25N60N_F102 ..FDC638APZ
FDC638P ..FDH3632
FDH3632 ..FDMS7672
FDMS7672 ..FDPF12N60NZ
FDPF13N50FT ..FDS8870
FDS8870 ..FQA40N25
FQA44N30 ..FQP3N80C
FQP3P20 ..FRK260H
FRK260R ..FW274
FW282 ..H7P1002DS
H7P1006MD90TZ ..HAT2266H
HAT2267H ..HUF76443P3
HUF76443S3S ..IPB60R099CP
IPB60R099CPA ..IPG20N04S4-09
IPG20N04S4-12 ..IPP180N10N3G
IPP200N15N3G ..IRC830-008
IRC8305 ..IRF530FI
IRF530N ..IRF7241
IRF730 ..IRF820AL
IRF820AS ..IRFB59N10D
IRFB61N15D ..IRFI9540N
IRFI9620G ..IRFP470
IRFP4710 ..IRFS352
IRFS353 ..IRFU024N
IRFU025 ..IRL2203N
IRL2203NL ..IRLR120N
IRLR130A ..IXFB62N80Q3
IXFB70N60Q2 ..IXFK100N25
IXFK102N30P ..IXFN32N100Q3
IXFN32N120 ..IXFT26N50Q
IXFT26N60P ..IXKP13N60C5M
IXKP20N60C5 ..IXTH140P05T
IXTH14N100 ..IXTM15N60
IXTM20N60 ..IXTQ160N075T
IXTQ160N085T ..IXTY08N100P
IXTY08N50D2 ..KHB4D0N65F2
KHB4D0N65P ..KP750B
KP750B1 ..MPF102
MPF4393 ..MTE20N10FP
MTE50N10FP ..MTNK5C3
MTNK5N3 ..NDP6051L
NDP6060 ..NTLJS3113P
NTLJS4114N ..PHB8N50E
PHB8ND50E ..PMZ760SN
PN4091 ..R6006ANX
R6008ANX ..RFT2P03L
RFT3055LE ..RJK6012DPE
RJK6013DPE ..RW1A030AP
RW1C015UN ..SE3406
SE3407 ..SIF2N65C
SIF2N65D ..SML20L100
SML20S56 ..SPA08N80C3
SPA11N60C3 ..SSE90N08-08
SSE90N10-14 ..SSM3J313T
SSM3J314T ..SSM6P25TU
SSM6P26TU ..STB25NM60ND
STB26NM60N ..STD4NK50Z-1
STD4NK50ZD ..STFI20NK50Z
STFW12N120K5 ..STP10N62K3
STP10NA40 ..STP4N150
STP4N20 ..STS5PF30L
STS6NF20V ..STY60NM50
STY60NM60 ..TK4P60DB
TK50F15J1 ..TPC8213-H
TPC8214-H ..TPCS8303
TPCT4201 ..UTT4425
UTT4815 ..ZXMN2088DE6
ZXMN20B28K ..ZXMS6006SG
 
IRF540N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF540N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF540N

Type of IRF540N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 140

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 33

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF540N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO220AB

Equivalent transistors for IRF540N

IRF540N PDF doc:

1.1. irf540n.pdf Size:99K _international_rectifier

IRF540N
IRF540N
PD - 91341B IRF540N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

1.2. irf540ns.pdf Size:125K _international_rectifier

IRF540N
IRF540N
PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipat

4.1. irf540.rev3.2.pdf Size:142K _motorola

IRF540N
IRF540N
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET.? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.070 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor ? controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified D • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperatur

4.2. irf540_mot.pdf Size:144K _motorola

IRF540N
IRF540N
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET.? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.077 OHMS recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, ? these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage tran- sients. • Avalanche Energy Specified D • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperat

4.3. irf540_s_1.pdf Size:88K _philips

IRF540N
IRF540N
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 23 A g RDS(ON) ? 77 m? s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • switched mode power supplies • T.V. and computer monitor power supplies The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 175?C - 100 V VDGR Drain-gate

4.4. irf540.pdf Size:53K _st

IRF540N
IRF540N
IRF540 IRF540FI N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V < 0.077 ? 30 A IRF540FI 100 V < 0.077 ? 16 A TYPICAL R = 0.050 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 TO-220FI APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTER INTERNAL SCHEMATIC DIAGRAM AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF530 IRF530FI VDS Drain-source Voltage (VGS = 0) 100 V VDGR 100 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C30 A 17 o I Drain Current (continuous) at T = 100 C21 A 12 D c I (•) Drain Current (pulsed) 120 120 A DM o Ptot Tota

4.5. irf540-1-2-3-fi.pdf Size:481K _st2

IRF540N
IRF540N
˙ţ

4.6. irf540a.pdf Size:256K _fairchild_semi

IRF540N
IRF540N
IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) C 28 ID A ? Continuous Drain Current (TC=100 ) C 19.8 IDM Drain Current-Pulsed 1 110 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 523 mJ O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O ? Total Power Dissipation (TC=25 ) W C 107 PD ? Linear Derating Factor 0.71 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature

4.7. irf540.pdf Size:146K _fairchild_semi

IRF540N
IRF540N

4.8. irf540spbf.pdf Size:1411K _international_rectifier

IRF540N
IRF540N
PD- 95983 IRF540SPbF • Lead-Free 12/21/04 Document Number: 91022 www.vishay.com 1 IRF540SPbF Document Number: 91022 www.vishay.com 2 IRF540SPbF Document Number: 91022 www.vishay.com 3 IRF540SPbF Document Number: 91022 www.vishay.com 4 IRF540SPbF Document Number: 91022 www.vishay.com 5 IRF540SPbF Document Number: 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD R

4.9. irf540z.pdf Size:173K _international_rectifier

IRF540N
IRF540N
PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5m? 175°C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C 34 A Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 24 Continuous Drain Current, VGS @ 10V (See Fig. 9) I

4.10. irf540pbf.pdf Size:1312K _international_rectifier

IRF540N
IRF540N
PD - 94848 IRF540PbF • Lead-Free 11/17/03 Document Number: 91021 www.vishay.com 1 IRF540PbF Document Number: 91021 www.vishay.com 2 IRF540PbF Document Number: 91021 www.vishay.com 3 IRF540PbF Document Number: 91021 www.vishay.com 4 IRF540PbF Document Number: 91021 www.vishay.com 5 IRF540PbF Document Number: 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.11. irf540s.pdf Size:184K _international_rectifier

IRF540N
IRF540N

4.12. irf540.pdf Size:177K _international_rectifier

IRF540N
IRF540N

4.13. irf540a.pdf Size:951K _samsung

IRF540N
IRF540N
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 28 ID A ? Continuous Drain Current (TC=100 ) 19.8 1 IDM Drain Current-Pulsed A 110 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 523 O IAR Avalanche Current 1 28 A O EAR Repetitive Avalanche Energy 1 10.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 107 W PD ? Linear Derating Factor W/ 0.71 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp

4.14. irf540_sihf540.pdf Size:202K _vishay

IRF540N
IRF540N
IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.077 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF540PbF Lead (Pb)-free SiHF540-E3

See also transistors datasheet: IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRFB3306 , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A .

Keywords

 IRF540N Datasheet  IRF540N Datenblatt  IRF540N RoHS  IRF540N Distributor
 IRF540N Application Notes  IRF540N Component  IRF540N Circuit  IRF540N Schematic
 IRF540N Equivalent  IRF540N Cross Reference  IRF540N Data Sheet  IRF540N Fiche Technique

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