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IRF540N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF540N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 140 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 33 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.052 Ohm

Тип корпуса: TO220AB

Аналог (замена) для IRF540N

 

 

IRF540N Datasheet (PDF)

1.1. irf540ns.pdf Size:125K _international_rectifier

IRF540N
IRF540N

PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistanc

1.2. irf540n.pdf Size:99K _international_rectifier

IRF540N
IRF540N

PD - 91341B IRF540N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

 1.3. irf540npbf.pdf Size:153K _international_rectifier

IRF540N
IRF540N

PD - 94812 IRF540NPbF HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44mΩ Fast Switching G Fully Avalanche Rated ID = 33A Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

1.4. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

IRF540N
IRF540N

PD - 95130 IRF540NSPbF IRF540NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44mΩ l Lead-Free G Description Advanced HEXFET Power MOSFETs from ID = 33A International Rectifier utilize advanced processing S techniques to achi

 1.5. irf540ns.pdf Size:2432K _kexin

IRF540N
IRF540N

SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit:mm 9.65 (Min) 10.67 (Max) ■ Features 5.33 (Min) ● VDS (V) = 100V 90 ~ 93 ● ID = 33 A (VGS = 10V) ● RDS(ON) < 44mΩ (VGS = 10V) 6.22 (min) ● Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27~1.78 1.14~1.40 0.43~0.63 G 1 Gate 0.51~0.99 2 Drain 2.54 3 Sour

Другие MOSFET... IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRFB3306 , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A .

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