IRF540N Todos los transistores

 

IRF540N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF540N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 71(max) nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de MOSFET IRF540N

 

IRF540N Datasheet (PDF)

 ..1. Size:153K  international rectifier
irf540npbf.pdf

IRF540N IRF540N

PD - 94812IRF540NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44m Fast SwitchingG Fully Avalanche RatedID = 33A Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely l

 ..2. Size:99K  international rectifier
irf540n.pdf

IRF540N IRF540N

PD - 91341BIRF540NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44mG Fast Switching Fully Avalanche RatedID = 33ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

 ..3. Size:153K  infineon
irf540npbf.pdf

IRF540N IRF540N

PD - 94812IRF540NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44m Fast SwitchingG Fully Avalanche RatedID = 33A Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely l

 ..4. Size:676K  slkor
irf540ns irf540n.pdf

IRF540N IRF540N

IRF540N/NS100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) TO-263 Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking IRF540N TO-220 IRF540N IRF540NS TO-263 IRF540NS Absolute Maxim

 ..5. Size:661K  cn evvo
irf540n.pdf

IRF540N IRF540N

RIRF540NN-Ch 100V Fast Switching MOSFETs Super Low Gate Charge Product Summary Excellent Cdv/dt effect decline Green Device Available Advanced high cell density Trench BVDSS RDSON ID technology 100V 47m 27A Description TO220 Pin Configuration The IRF540N is the high cell density trenchedN-ch MOSFETs, which provide excellent RDSON and gate charge for

 ..6. Size:817K  cn vbsemi
irf540n.pdf

IRF540N IRF540N

IRF540Nwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

 ..7. Size:242K  inchange semiconductor
irf540npbf.pdf

IRF540N IRF540N

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF540NPBFFEATURESDrain Current I = 33A@ T =25D CStatic Drain-Source On-Resistance: R = 44m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRITIONDesigned especially for high voltage,high speed applications,such as off-line switchi

 ..8. Size:244K  inchange semiconductor
irf540n.pdf

IRF540N IRF540N

isc N-Channel MOSFET Transistor IRF540NIIRF540NFEATURESStatic drain-source on-resistance:RDS(on) 0.044Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 0.1. Size:125K  international rectifier
irf540ns.pdf

IRF540N IRF540N

PD - 91342IRF540NSIRF540NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely low on-r

 0.2. Size:279K  international rectifier
irf540nlpbf irf540nspbf.pdf

IRF540N IRF540N

PD - 95130IRF540NSPbFIRF540NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from ID = 33AInternational Rectifier utilize advanced processing Stechniques to achi

 0.3. Size:277K  infineon
irf540ns irf540nl.pdf

IRF540N IRF540N

PD - 91342BIRF540NSIRF540NLl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely l

 0.4. Size:2432K  kexin
irf540ns.pdf

IRF540N IRF540N

SMD Type MOSFETN-Channel MOSFETIRF540NS (KRF540NS)TO-263Unit:mm 9.65 (Min)10.67 (Max) Features5.33 (Min) VDS (V) = 100V 90 ~ 93 ID = 33 A (VGS = 10V) RDS(ON) 44m (VGS = 10V)6.22 (min) Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max)1.65 (max)D1.27~1.781.14~1.400.43~0.63G 1 Gate0.51~0.992 Drain 2.543 Sour

 0.5. Size:1657K  cn vbsemi
irf540nstrpbf.pdf

IRF540N IRF540N

IRF540NSTRPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDD2PAK (TO-263)GDGSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,

 0.6. Size:255K  inchange semiconductor
irf540nl.pdf

IRF540N IRF540N

Isc N-Channel MOSFET Transistor IRF540NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

 0.7. Size:257K  inchange semiconductor
irf540ns.pdf

IRF540N IRF540N

Isc N-Channel MOSFET Transistor IRF540NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Otros transistores... IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , 7N65 , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A .

History: IRF1010N | 75307D3 | 40600 | IRFD24N | HQB7N65C

 

 
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History: IRF1010N | 75307D3 | 40600 | IRFD24N | HQB7N65C

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