IRF540N Datasheet. Equivalente

 ..1. Size:153K  international rectifier
 irf540npbf.pdf

PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 44m Fast Switching G Fully Avalanche Rated ID = 33A Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 ..2. Size:99K  international rectifier
 irf540n.pdf

PD - 91341B IRF540N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 44m G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

 ..3. Size:676K  slkor
 irf540ns irf540n.pdf

IRF540N/NS 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) TO-263 Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking IRF540N TO-220 IRF540N IRF540NS TO-263 IRF540NS Absolute Maxim

 ..4. Size:661K  cn evvo
 irf540n.pdf

R IRF540N N-Ch 100V Fast Switching MOSFETs Super Low Gate Charge Product Summary Excellent Cdv/dt effect decline Green Device Available Advanced high cell density Trench BVDSS RDSON ID technology 100V 47m 27A Description TO220 Pin Configuration The IRF540N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for

 ..5. Size:817K  cn vbsemi
 irf540n.pdf

IRF540N www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

 ..6. Size:942K  cn minos
 irf540n.pdf

100V N-Channel Power MOSFET DESCRIPTION The IRF540N uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply KEY CHARACTERISTICS VDS = 100V,ID=35A RDS(ON)

 ..7. Size:242K  inchange semiconductor
 irf540npbf.pdf

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF540NPBF FEATURES Drain Current I = 33A@ T =25 D C Static Drain-Source On-Resistance R = 44m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed especially for high voltage,high speed applications, such as off-line switchi

 ..8. Size:244K  inchange semiconductor
 irf540n.pdf

isc N-Channel MOSFET Transistor IRF540N IIRF540N FEATURES Static drain-source on-resistance RDS(on) 0.044 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 0.1. Size:277K  international rectifier
 irf540ns irf540nl.pdf

PD - 91342B IRF540NS IRF540NL l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely l

 0.2. Size:125K  international rectifier
 irf540ns.pdf

PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-r

 0.3. Size:279K  international rectifier
 irf540nlpbf irf540nspbf.pdf

PD - 95130 IRF540NSPbF IRF540NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44m l Lead-Free G Description Advanced HEXFET Power MOSFETs from ID = 33A International Rectifier utilize advanced processing S techniques to achi

 0.4. Size:2432K  kexin
 irf540ns.pdf

SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit mm 9.65 (Min) 10.67 (Max) Features 5.33 (Min) VDS (V) = 100V 90 93 ID = 33 A (VGS = 10V) RDS(ON) 44m (VGS = 10V) 6.22 (min) Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27 1.78 1.14 1.40 0.43 0.63 G 1 Gate 0.51 0.99 2 Drain 2.54 3 Sour

 0.5. Size:1657K  cn vbsemi
 irf540nstrpbf.pdf

IRF540NSTRPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C,

 0.6. Size:255K  inchange semiconductor
 irf540nl.pdf

Isc N-Channel MOSFET Transistor IRF540NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100

 0.7. Size:257K  inchange semiconductor
 irf540ns.pdf

Isc N-Channel MOSFET Transistor IRF540NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt