IRF540N MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF540N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 140 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 33 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 47.3 nC
Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
Package: TO220AB
IRF540N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF540N Datasheet (PDF)
0.1. irf540n.pdf 
Size:99K _international_rectifier
PD - 91341B IRF540N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44mΩ G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan
0.2. irf540npbf.pdf Size:153K _international_rectifier
PD - 94812 IRF540NPbF HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44mΩ Fast Switching G Fully Avalanche Rated ID = 33A Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
0.3. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier
PD - 95130 IRF540NSPbF IRF540NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44mΩ l Lead-Free G Description Advanced HEXFET Power MOSFETs from ID = 33A International Rectifier utilize advanced processing S techniques to achi
0.4. irf540ns.pdf Size:125K _international_rectifier
PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44mΩ Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-r
0.5. irf540ns.pdf Size:2432K _kexin
SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit:mm 9.65 (Min) 10.67 (Max) ■ Features 5.33 (Min) ● VDS (V) = 100V 90 ~ 93 ● ID = 33 A (VGS = 10V) ● RDS(ON) ＜ 44mΩ (VGS = 10V) 6.22 (min) ● Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27~1.78 1.14~1.40 0.43~0.63 G 1 Gate 0.51~0.99 2 Drain 2.54 3 Sour
Datasheet: IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRFB3306 , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A .
