All MOSFET. IRF540N Datasheet

 

IRF540N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF540N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 33 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 47.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm

Package: TO220AB

IRF540N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF540N Datasheet (PDF)

1.1. irf540n.pdf Size:99K _international_rectifier

IRF540N IRF540N

PD - 91341B IRF540N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.2. irf540npbf.pdf Size:153K _international_rectifier

IRF540N IRF540N

PD - 94812 IRF540NPbF HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 44mΩ Fast Switching G Fully Avalanche Rated ID = 33A Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 1.3. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

IRF540N IRF540N

PD - 95130 IRF540NSPbF IRF540NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44mΩ l Lead-Free G Description Advanced HEXFET Power MOSFETs from ID = 33A International Rectifier utilize advanced processing S techniques to achi

1.4. irf540ns.pdf Size:125K _international_rectifier

IRF540N IRF540N

PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistanc

 1.5. irf540n.pdf Size:244K _inchange_semiconductor

IRF540N IRF540N

isc N-Channel MOSFET Transistor IRF540N，IIRF540N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SY

1.6. irf540ns.pdf Size:257K _inchange_semiconductor

IRF540N IRF540N

Isc N-Channel MOSFET Transistor IRF540NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

1.7. irf540ns.pdf Size:2432K _kexin

IRF540N IRF540N

SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit:mm 9.65 (Min) 10.67 (Max) ■ Features 5.33 (Min) ● VDS (V) = 100V 90 ~ 93 ● ID = 33 A (VGS = 10V) ● RDS(ON) ＜ 44mΩ (VGS = 10V) 6.22 (min) ● Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27~1.78 1.14~1.40 0.43~0.63 G 1 Gate 0.51~0.99 2 Drain 2.54 3 Sour

Datasheet: IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRFB3306 , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A .

 

 
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