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IRLR2905 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLR2905

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 4.5 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm

Package: TO252AA

IRLR2905 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRLR2905 PDF doc:

1.1. irlr2905.pdf Size:135K _international_rectifier

IRLR2905
IRLR2905

PD- 91334E IRLR/U2905 HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905) RDS(on) = 0.027? G Advanced Process Technology Fast Switching ID = 42A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

3.1. irlr2908.pdf Size:206K _international_rectifier

IRLR2905
IRLR2905

PD - 94501 IRLR2908 AUTOMOTIVE MOSFET IRLU2908 HEXFET® Power MOSFET Features D l Advanced Process Technology VDSS = 80V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 28m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 30A S Description Specifically designed for Automotive applications, this HEXFET ® Power MOSFET util

5.1. irlr2703.pdf Size:210K _international_rectifier

IRLR2905
IRLR2905

PD- 9.1335B IRLR/U2703 PRELIMINARY HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR2703) Straight Lead (IRLU2703) RDS(on) = 0.045? G Advanced Process Technology Fast Switching ID = 23A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

5.2. irlr2705.pdf Size:162K _international_rectifier

IRLR2905
IRLR2905

PD- 9.1317B IRLR/U2705 PRELIMINARY HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2705) Straight Lead (IRLU2705) RDS(on) = 0.040? G Advanced Process Technology Fast Switching ID = 28A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

5.3. irlr210a.pdf Size:884K _samsung

IRLR2905
IRLR2905

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

5.4. irlr230a.pdf Size:907K _samsung

IRLR2905
IRLR2905

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

5.5. irlr220a.pdf Size:904K _samsung

IRLR2905
IRLR2905

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

Datasheet: IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , 2SK2545 , IRLR3103 , IRLR3303 , IRLR3410 , IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A .

 


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