All MOSFET. IRLR2905 Datasheet

 

IRLR2905 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLR2905

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 32 nC

Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm

Package: TO252AA

IRLR2905 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLR2905 Datasheet (PDF)

..1. irlr2905.pdf Size:135K _international_rectifier

IRLR2905
IRLR2905

PD- 91334EIRLR/U2905HEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905)RDS(on) = 0.027G Advanced Process Technology Fast SwitchingID = 42A S Fully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the l

..2. irlr2905 irlu2905.pdf Size:314K _infineon

IRLR2905
IRLR2905

PD- 95084AIRLR/U2905PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR2905)VDSS = 55Vl Straight Lead (IRLU2905)l Advanced Process TechnologyRDS(on) = 0.027l Fast SwitchingGl Fully Avalanche RatedID = 42Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t

..3. irlr2905.pdf Size:241K _inchange_semiconductor

IRLR2905
IRLR2905

isc N-Channel MOSFET Transistor IRLR2905, IIRLR2905FEATURESStatic drain-source on-resistance:RDS(on)27mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

0.1. irlu2905zpbf irlr2905zpbf.pdf Size:328K _international_rectifier

IRLR2905
IRLR2905

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

0.2. irlr2905pbf irlu2905pbf.pdf Size:314K _international_rectifier

IRLR2905
IRLR2905

PD- 95084AIRLR/U2905PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR2905)VDSS = 55Vl Straight Lead (IRLU2905)l Advanced Process TechnologyRDS(on) = 0.027l Fast SwitchingGl Fully Avalanche RatedID = 42Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t

 

 0.3. auirlr2905ztr.pdf Size:273K _international_rectifier

IRLR2905
IRLR2905

PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automot

0.4. auirlr2905tr.pdf Size:238K _international_rectifier

IRLR2905
IRLR2905

AUIRLR2905AUTOMOTIVE GRADEAUIRLU2905 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate DriveDV(BR)DSS Low On-Resistance 55V Dynamic dV/dT RatingRDS(on) max.27m 175C Operating Temperature G Fast SwitchingID42AS Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxD Lead-Free, RoHS Compliant Autom

 0.5. irlr2905zpbf irlu2905zpbf.pdf Size:340K _infineon

IRLR2905
IRLR2905

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

0.6. auirlr2905z.pdf Size:660K _infineon

IRLR2905
IRLR2905

AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc

0.7. irlr2905tr.pdf Size:797K _cn_vbsemi

IRLR2905
IRLR2905

IRLR2905TRwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

0.8. irlr2905ztr.pdf Size:836K _cn_vbsemi

IRLR2905
IRLR2905

IRLR2905ZTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi

0.9. irlr2905z.pdf Size:242K _inchange_semiconductor

IRLR2905
IRLR2905

isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905ZFEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV G

Datasheet: IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , 75N75 , IRLR3103 , IRLR3303 , IRLR3410 , IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A .

 

 
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