All MOSFET. IRLR2905 Datasheet

 

IRLR2905 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLR2905

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 32 nC

Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm

Package: TO252AA

IRLR2905 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLR2905 Datasheet (PDF)

0.1. irlu2905zpbf irlr2905zpbf.pdf Size:328K _international_rectifier

IRLR2905 IRLR2905

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET® Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 13.5mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extrem

0.2. irlr2905pbf irlu2905pbf.pdf Size:314K _international_rectifier

IRLR2905 IRLR2905

PD- 95084A IRLR/U2905PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027Ω l Fast Switching G l Fully Avalanche Rated ID = 42A… l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t

 0.3. irlr2905.pdf Size:135K _international_rectifier

IRLR2905 IRLR2905

PD- 91334E IRLR/U2905 HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905) RDS(on) = 0.027Ω G Advanced Process Technology Fast Switching ID = 42A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the l

0.4. auirlr2905ztr.pdf Size:273K _international_rectifier

IRLR2905 IRLR2905

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 13.5mΩ ● Fast Switching G ID (Silicon Limited) 60A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automot

 0.5. auirlr2905tr.pdf Size:238K _international_rectifier

IRLR2905 IRLR2905

AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive D V(BR)DSS • Low On-Resistance 55V • Dynamic dV/dT Rating RDS(on) max. 27m • 175°C Operating Temperature G • Fast Switching ID 42A S • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax D • Lead-Free, RoHS Compliant • Autom

Datasheet: IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , 2SK2545 , IRLR3103 , IRLR3303 , IRLR3410 , IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A .

 

 
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