IRLR2905 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLR2905
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 69 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 36 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm
Package: TO252AA
IRLR2905 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLR2905 Datasheet (PDF)
0.1. irlu2905zpbf irlr2905zpbf.pdf 
Size:328K _international_rectifier
PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem
0.2. irlr2905pbf irlu2905pbf.pdf Size:314K _international_rectifier
PD- 95084AIRLR/U2905PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR2905)VDSS = 55Vl Straight Lead (IRLU2905)l Advanced Process TechnologyRDS(on) = 0.027l Fast SwitchingGl Fully Avalanche RatedID = 42Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t
0.3. irlr2905.pdf Size:135K _international_rectifier
PD- 91334EIRLR/U2905HEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905)RDS(on) = 0.027G Advanced Process Technology Fast SwitchingID = 42A S Fully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the l
0.4. auirlr2905ztr.pdf Size:273K _international_rectifier
PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automot
0.5. auirlr2905tr.pdf Size:238K _international_rectifier
AUIRLR2905AUTOMOTIVE GRADEAUIRLU2905 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate DriveDV(BR)DSS Low On-Resistance 55V Dynamic dV/dT RatingRDS(on) max.27m 175C Operating Temperature G Fast SwitchingID42AS Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxD Lead-Free, RoHS Compliant Autom
0.6. irlr2905.pdf Size:241K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRLR2905, IIRLR2905FEATURESStatic drain-source on-resistance:RDS(on)27mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-
0.7. irlr2905z.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905ZFEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV G
Datasheet: IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , 2SK2545 , IRLR3103 , IRLR3303 , IRLR3410 , IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A .
