IRLR2905 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLR2905
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 69 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 36 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm
Package: TO252AA
IRLR2905 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLR2905 Datasheet (PDF)
1.1. irlu2905zpbf irlr2905zpbf.pdf 
Size:328K _international_rectifier
PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET® Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 13.5mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extrem
1.2. irlr2905pbf irlu2905pbf.pdf Size:314K _international_rectifier
PD- 95084A IRLR/U2905PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027Ω l Fast Switching G l Fully Avalanche Rated ID = 42A… l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t
1.3. irlr2905.pdf Size:135K _international_rectifier
PD- 91334E IRLR/U2905 HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905) RDS(on) = 0.027? G Advanced Process Technology Fast Switching ID = 42A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest
Datasheet: IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , 2SK2545 , IRLR3103 , IRLR3303 , IRLR3410 , IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A .
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