IRLR2905 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR2905
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 69 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 16 V
Corriente continua de drenaje (Id): 36 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2 V
Carga de compuerta (Qg): 32 nC
Resistencia drenaje-fuente RDS(on): 0.027 Ohm
Empaquetado / Estuche: TO252AA
Búsqueda de reemplazo de MOSFET IRLR2905
IRLR2905 Datasheet (PDF)
1.1. irlu2905zpbf irlr2905zpbf.pdf 
Size:328K _international_rectifier
PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET® Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 13.5mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extrem
1.2. irlr2905pbf irlu2905pbf.pdf Size:314K _international_rectifier
PD- 95084A IRLR/U2905PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027Ω l Fast Switching G l Fully Avalanche Rated ID = 42A… l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t
1.3. irlr2905.pdf Size:135K _international_rectifier
PD- 91334E IRLR/U2905 HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905) RDS(on) = 0.027? G Advanced Process Technology Fast Switching ID = 42A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest
1.4. auirlr2905ztr.pdf Size:273K _international_rectifier
PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 13.5mΩ ● Fast Switching G ID (Silicon Limited) 60A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automot
1.5. auirlr2905tr.pdf Size:238K _international_rectifier
AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive D V(BR)DSS • Low On-Resistance 55V • Dynamic dV/dT Rating RDS(on) max. 27m • 175°C Operating Temperature G • Fast Switching ID 42A S • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax D • Lead-Free, RoHS Compliant • Autom
1.6. irlr2905.pdf Size:241K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRLR2905, IIRLR2905 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-
1.7. irlr2905z.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V G
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
