IRLR2905 Todos los transistores

 

IRLR2905 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR2905

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 69 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 36 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 32 nC

Resistencia drenaje-fuente RDS(on): 0.027 Ohm

Empaquetado / Estuche: TO252AA

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IRLR2905 Datasheet (PDF)

1.1. irlu2905zpbf irlr2905zpbf.pdf Size:328K _international_rectifier

IRLR2905
IRLR2905

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET® Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 13.5mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extrem

1.2. irlr2905pbf irlu2905pbf.pdf Size:314K _international_rectifier

IRLR2905
IRLR2905

PD- 95084A IRLR/U2905PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027Ω l Fast Switching G l Fully Avalanche Rated ID = 42A… l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t

 1.3. irlr2905.pdf Size:135K _international_rectifier

IRLR2905
IRLR2905

PD- 91334E IRLR/U2905 HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905) RDS(on) = 0.027Ω G Advanced Process Technology Fast Switching ID = 42A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the l

1.4. auirlr2905ztr.pdf Size:273K _international_rectifier

IRLR2905
IRLR2905

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 13.5mΩ ● Fast Switching G ID (Silicon Limited) 60A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automot

 1.5. auirlr2905tr.pdf Size:238K _international_rectifier

IRLR2905
IRLR2905

AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive D V(BR)DSS • Low On-Resistance 55V • Dynamic dV/dT Rating RDS(on) max. 27m • 175°C Operating Temperature G • Fast Switching ID 42A S • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax D • Lead-Free, RoHS Compliant • Autom

1.6. irlr2905.pdf Size:241K _inchange_semiconductor

IRLR2905
IRLR2905

isc N-Channel MOSFET Transistor IRLR2905, IIRLR2905 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

1.7. irlr2905z.pdf Size:242K _inchange_semiconductor

IRLR2905
IRLR2905

isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V G

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