MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
RFP50N06
  RFP50N06
  RFP50N06
 
RFP50N06
  RFP50N06
  RFP50N06
 
RFP50N06
  RFP50N06
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
RFP50N06 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

RFP50N06 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RFP50N06

Type of RFP50N06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 131

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 50

Maximum junction temperature (Tj), °C: 150

Rise Time of RFP50N06 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.022

Package: TO220AB

Equivalent transistors for RFP50N06 - Cross-Reference Search

RFP50N06 PDF doc:

1.1. rfg50n06_rfp50n06_rf1s50n06sm.pdf Size:373K _fairchild_semi

RFP50N06
RFP50N06
RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using • rDS(ON) = 0.022Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding • Peak Current vs Pulse Width Curve performance. They were designed for use in applications • UIS Rating Curve such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated • 175oC Operating Temperature directly from integrated circuits. Symbol Formerly developmental type TA49018. D Ordering Information PART NUMBER PACKAGE BRAND G RFG50N06 TO-247 RFG50N06 S RFP50N06 TO-220AB RFP50N06 RF1S50N06SM TO-263AB F1S50N06 NOTE: When ordering, use the entire part number. Add the suffix, 9A,

1.2. rfg50n06le_rfp50n06le_rf1s50n06lesm.pdf Size:154K _intersil

RFP50N06
RFP50N06
RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs • 50A, 60V These N-Channel enhancement mode power MOSFETs are • rDS(ON) = 0.022Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization • Peak Current vs Pulse Width Curve of silicon, resulting in outstanding performance. They were • UIS Rating Curve designed for use in applications such as switching regulators, switching converters, motor drivers, and relay • 175oC Operating Temperature drivers. These transistors can be operated directly from • Related Literature integrated circuits. - TB334 “Guidelines for Soldering Surface Mount Formerly developmental type TA49164. Components to PC Boards” Symbol Ordering Information D PART NUMBER PACKAGE BRAN

1.3. rfp50n06.pdf Size:74K _intersil

RFP50N06
RFP50N06
RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022? the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding Peak Current vs Pulse Width Curve performance. They were designed for use in applications UIS Rating Curve such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated 175oC Operating Temperature directly from integrated circuits. Symbol Formerly developmental type TA49018. D Ordering Information PART NUMBER PACKAGE BRAND G RFG50N06 TO-247 RFG50N06 S RFP50N06 TO-220AB RFP50N06 RF1S50N06SM TO-263AB F1S50N06 NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain

See also transistors datasheet: RFP40N10 , RFP40N10LE , RFP45N06 , RFP45N06LE , RFP4N05L , RFP4N06L , RFP4N100 , RFP50N05L , SPA11N60C3 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E .

Keywords

 RFP50N06 Datasheet  RFP50N06 Datenblatt  RFP50N06 RoHS  RFP50N06 Distributor
 RFP50N06 Application Notes  RFP50N06 Component  RFP50N06 Circuit  RFP50N06 Schematic
 RFP50N06 Equivalent  RFP50N06 Cross Reference  RFP50N06 Data Sheet  RFP50N06 Fiche Technique

 

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