STP50N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 50 nC
Rise Time (tr): 110 nS
Drain-Source Capacitance (Cd): 630 pF
Maximum Drain-Source On-State Resistance (Rds): 0.056 Ohm
Package: TO220
STP50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP50N06 Datasheet (PDF)
stp50n06.pdf
STP50N06STP50N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06 60 V
stp50n06l.pdf
STP50N06LSTP50N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06L 60 V
stp50n06-.pdf
STP50N06STP50N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP50N06 60 V
stp50n06l-fi.pdf
STP50N06LSTP50N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06L 60 V
Datasheet: STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 , STP4NA80FI , STP50N05L , STP50N05LFI , IRFZ44 , STP50N06FI , STP50N06L , STP50N06LFI , STP53N05 , STP53N06 , STP55N05L , STP55N05LFI , STP55N06L .
