All MOSFET. STP50N06 Datasheet

 

STP50N06 Datasheet and Replacement


   Type Designator: STP50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

STP50N06 Datasheet (PDF)

 ..1. Size:396K  st
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STP50N06

STP50N06STP50N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06 60 V

 0.1. Size:397K  st
 stp50n06l.pdf pdf_icon

STP50N06

STP50N06LSTP50N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06L 60 V

 0.2. Size:201K  st
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STP50N06

STP50N06STP50N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP50N06 60 V

 0.3. Size:404K  st
 stp50n06l-fi.pdf pdf_icon

STP50N06

STP50N06LSTP50N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06L 60 V

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Datasheet: STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 , STP4NA80FI , STP50N05L , STP50N05LFI , IRF640 , STP50N06FI , STP50N06L , STP50N06LFI , STP53N05 , STP53N06 , STP55N05L , STP55N05LFI , STP55N06L .

History: MCH3484 | DMN30H4D0L

Keywords - STP50N06 MOSFET datasheet

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