STP50N06 Specs and Replacement
Type Designator: STP50N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: TO220
STP50N06 substitution
- MOSFET ⓘ Cross-Reference Search
STP50N06 datasheet
stp50n06.pdf
STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP50N06 60 V ... See More ⇒
stp50n06l.pdf
STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP50N06L 60 V ... See More ⇒
stp50n06-.pdf
STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP50N06 60 V ... See More ⇒
stp50n06l-fi.pdf
STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP50N06L 60 V ... See More ⇒
Detailed specifications: STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 , STP4NA80FI , STP50N05L , STP50N05LFI , IRFZ44 , STP50N06FI , STP50N06L , STP50N06LFI , STP53N05 , STP53N06 , STP55N05L , STP55N05LFI , STP55N06L .
History: FQU13N10L
Keywords - STP50N06 MOSFET specs
STP50N06 cross reference
STP50N06 equivalent finder
STP50N06 pdf lookup
STP50N06 substitution
STP50N06 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FQU13N10L
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