FDS4501H MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS4501H
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30(20) V
Maximum Gate-Source Voltage |Vgs|: 20(8) V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3(1.5) V
Maximum Drain Current |Id|: 9.3(5.6) A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17(13) nC
Rise Time (tr): 5(15) nS
Drain-Source Capacitance (Cd): 424(240) pF
Maximum Drain-Source On-State Resistance (Rds): 0.018(0.046) Ohm
Package: SO-8
FDS4501H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS4501H Datasheet (PDF)
fds4501h.pdf
May 2001 FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is Q1: N-Channel produced using Fairchilds advanced PowerTrench 9.3A, 30V RDS(on) = 18 m @ VGS = 10V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate RDS(on) = 23 m @ VGS =
fds4501h.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds4559 f085.pdf
October 2008 tmFDS4559_F085 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RD
fds4559.pdf
April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 75 m
fds4559.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth
Datasheet: FDS4141F085 , FDS4435BZ , FDS4435BZF085 , FDS4465 , FDS4465F085 , FDS4470 , FDS4488 , STD12L01 , MMD60R360PRH , STB458D , STB440S , FDS4559 , STB438S , FDS4559F085 , STB438A , FDS4672A , FDS4675F085 .
History: FDS8840NZ
