Справочник MOSFET. FDS4501H

 

FDS4501H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS4501H
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30(20) V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20(8) V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3(1.5) V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.3(5.6) A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17(13) nC
   trⓘ - Время нарастания: 5(15) ns
   Cossⓘ - Выходная емкость: 424(240) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018(0.046) Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS4501H

 

 

FDS4501H Datasheet (PDF)

 ..1. Size:1390K  fairchild semi
 fds4501h.pdf

FDS4501H FDS4501H

May 2001 FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is Q1: N-Channel produced using Fairchilds advanced PowerTrench 9.3A, 30V RDS(on) = 18 m @ VGS = 10V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate RDS(on) = 23 m @ VGS =

 ..2. Size:1496K  onsemi
 fds4501h.pdf

FDS4501H FDS4501H

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:380K  fairchild semi
 fds4559 f085.pdf

FDS4501H FDS4501H

October 2008 tmFDS4559_F085 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RD

 9.2. Size:147K  fairchild semi
 fds4559.pdf

FDS4501H FDS4501H

April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 75 m

 9.3. Size:288K  onsemi
 fds4559.pdf

FDS4501H FDS4501H

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top