FDS4501H MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDS4501H
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30(20) V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20(8) V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3(1.5) V
   |Id|ⓘ - Maximum Drain Current: 9.3(5.6) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17(13) nC
   trⓘ - Rise Time: 5(15) nS
   Cossⓘ - Output Capacitance: 424(240) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018(0.046) Ohm
   Package: SO-8

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