FDS4501H Datasheet. Specs and Replacement

Type Designator: FDS4501H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30(20) V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20(8) V

|Id| ⓘ - Maximum Drain Current: 9.3(5.6) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5(15) nS

Cossⓘ - Output Capacitance: 424(240) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018(0.046) Ohm

Package: SO-8

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FDS4501H datasheet

 ..1. Size:1390K  fairchild semi
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FDS4501H

May 2001 FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is Q1 N-Channel produced using Fairchild s advanced PowerTrench 9.3A, 30V RDS(on) = 18 m @ VGS = 10V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate RDS(on) = 23 m @ VGS =... See More ⇒

 ..2. Size:1496K  onsemi
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FDS4501H

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:380K  fairchild semi
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FDS4501H

October 2008 tm FDS4559_F085 60V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RD... See More ⇒

 9.2. Size:147K  fairchild semi
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FDS4501H

April 2002 FDS4559 60V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 75 m... See More ⇒

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Detailed specifications: FDS4141F085, FDS4435BZ, FDS4435BZF085, FDS4465, FDS4465F085, FDS4470, FDS4488, STD12L01, IRF1405, STB458D, STB440S, FDS4559, STB438S, FDS4559F085, STB438A, FDS4672A, FDS4675F085

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