FDS4501H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS4501H
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30(20) V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20(8) V
   |Id|ⓘ - Corriente continua de drenaje: 9.3(5.6) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5(15) nS
   Cossⓘ - Capacitancia de salida: 424(240) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018(0.046) Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET FDS4501H

FDS4501H Datasheet (PDF)

..1. Size:1390K fairchild semi
fds4501h.pdf

May 2001 FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is Q1: N-Channel produced using Fairchilds advanced PowerTrench 9.3A, 30V RDS(on) = 18 m @ VGS = 10V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate RDS(on) = 23 m @ VGS =

..2. Size:1496K onsemi
fds4501h.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fds4559 f085.pdf

October 2008 tmFDS4559_F085 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RD

9.2. Size:147K fairchild semi
fds4559.pdf

April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 75 m

9.3. Size:288K onsemi
fds4559.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

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