SP8651 Datasheet. Specs and Replacement
Type Designator: SP8651 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 463 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SMINI8
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SP8651 datasheet
sp8651.pdf
Green Product SP8651 a S mHop Microelectronics C orp. Ver 3.7 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14.0 @ VGS=4.5V Suface Mount Package. 15.0 @ VGS=4.0V ESD Protected. 24V 10A 16.0 @ VGS=3.7V 17.5 @ VGS=3.1V 21.0 @ VGS=2.5V 5 4 D2 G 2 ... See More ⇒
Detailed specifications: FDS6680AS, STA6611, FDS6681Z, FDS6682, STA6610, FDS6690AS, STA4470, FDS6692A, IRFZ44, FDS6699S, SP8611, FDS6892A, FDS6898A, FDS6898AZ, FDS6898AZF085, FDS6900AS, SP8608
Keywords - SP8651 MOSFET specs
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