SP8651 Spec and Replacement
Type Designator: SP8651
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 463 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SMINI8
SP8651 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SP8651 Specs
sp8651.pdf
Green Product SP8651 a S mHop Microelectronics C orp. Ver 3.7 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14.0 @ VGS=4.5V Suface Mount Package. 15.0 @ VGS=4.0V ESD Protected. 24V 10A 16.0 @ VGS=3.7V 17.5 @ VGS=3.1V 21.0 @ VGS=2.5V 5 4 D2 G 2 ... See More ⇒
Detailed specifications: FDS6680AS , STA6611 , FDS6681Z , FDS6682 , STA6610 , FDS6690AS , STA4470 , FDS6692A , IRFZ44 , FDS6699S , SP8611 , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 .
Keywords - SP8651 MOSFET specs
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