All MOSFET. SP8608 Datasheet

 

SP8608 Datasheet and Replacement


   Type Designator: SP8608
   Marking Code: 8608
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.1 nC
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 253 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SMINI8
 

 SP8608 substitution

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SP8608 Datasheet (PDF)

 ..1. Size:96K  samhop
 sp8608.pdf pdf_icon

SP8608

GreenProductSP8608aS mHop Microelectronics C orp.Ver 2.4Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.5 @ VGS=4.5VSuface Mount Package.9.8 @ VGS=4.0VESD Protected.20V 12A 10.5 @ VGS=3.8V12.5 @ VGS=3.1V15.0 @ VGS=2.5V5 4D2 G 26 3D

 9.1. Size:97K  samhop
 sp8601.pdf pdf_icon

SP8608

GreenProductSP8601aS mHop Microelectronics C orp.Ver 2.5Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17.5 @ VGS=4.5VSuface Mount Package.18.5 @ VGS=4.0V20V 7.2A 20.0 @ VGS=3.7V ESD Protected.24.5 @ VGS=3.1V27.0 @ VGS=2.5VD1 D1 D2 D2S mi

Datasheet: SP8651 , FDS6699S , SP8611 , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZF085 , FDS6900AS , IRFB4110 , FDS6910 , SP8601 , FDS6911 , FDS6930B , SP8256 , FDS6982AS , SP8255 , FDS6984AS .

Keywords - SP8608 MOSFET datasheet

 SP8608 cross reference
 SP8608 equivalent finder
 SP8608 lookup
 SP8608 substitution
 SP8608 replacement

 

 
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