BUR50S Specs and Replacement
Type Designator: BUR50S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 70 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BUR50S Substitution
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BUR50S datasheet
BUR50S HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 DESCRIPTION 2 The BUR50S is a silicon multiepitaxial planar NPN transistors in JEDEC TO-3 metal case, TO-3 intented for use in switching and linear applications in military and ind... See More ⇒
isc Silicon NPN Power Transistor BUR50 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min) CEO(SUS) High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is critical.It is particularly suited for battery swi... See More ⇒
Detailed specifications: BUR23, BUR24, BUR30, BUR31, BUR32, BUR33, BUR34, BUR50, 2SA1015, BUR51, BUR52, BUR53, BUR54, BUR55, BUR56, BUR60, BUR606
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