All Transistors. BUR50S Datasheet

 

BUR50S Datasheet and Replacement


   Type Designator: BUR50S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 350 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 70 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BUR50S Datasheet (PDF)

 ..1. Size:72K  st
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BUR50S

BUR50SHIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 1DESCRIPTION 2The BUR50S is a silicon multiepitaxial planarNPN transistors in JEDEC TO-3 metal case,TO-3intented for use in switching and linearapplications in military and ind

 9.1. Size:204K  inchange semiconductor
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BUR50S

isc Silicon NPN Power Transistor BUR50DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage ,high speed,power switching inInductive circuits where fall time is critical.It is particularlysuited for battery swi

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DTL3402 | 2SC2481 | MM2259 | A1504 | 8550SS-D | JA101O | BSYP06

Keywords - BUR50S transistor datasheet

 BUR50S cross reference
 BUR50S equivalent finder
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 BUR50S substitution
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