All Transistors. BUR50S Datasheet

 

BUR50S Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUR50S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 350 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 70 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 BUR50S Transistor Equivalent Substitute - Cross-Reference Search

   

BUR50S Datasheet (PDF)

 ..1. Size:72K  st
 bur50s.pdf

BUR50S BUR50S

BUR50SHIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 1DESCRIPTION 2The BUR50S is a silicon multiepitaxial planarNPN transistors in JEDEC TO-3 metal case,TO-3intented for use in switching and linearapplications in military and ind

 9.1. Size:204K  inchange semiconductor
 bur50.pdf

BUR50S BUR50S

isc Silicon NPN Power Transistor BUR50DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage ,high speed,power switching inInductive circuits where fall time is critical.It is particularlysuited for battery swi

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N4137 | 2N5154HR | 2SC1768 | 2SD1246 | 2SD1616G | 40444 | BUX48A

 

 
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