All Transistors. BUR50S Datasheet

 

BUR50S Datasheet and Replacement


   Type Designator: BUR50S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 350 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 70 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BUR50S Datasheet (PDF)

 ..1. Size:72K  st
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BUR50S

BUR50SHIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 1DESCRIPTION 2The BUR50S is a silicon multiepitaxial planarNPN transistors in JEDEC TO-3 metal case,TO-3intented for use in switching and linearapplications in military and ind

 9.1. Size:204K  inchange semiconductor
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BUR50S

isc Silicon NPN Power Transistor BUR50DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage ,high speed,power switching inInductive circuits where fall time is critical.It is particularlysuited for battery swi

Datasheet: BUR23 , BUR24 , BUR30 , BUR31 , BUR32 , BUR33 , BUR34 , BUR50 , 2SC2240 , BUR51 , BUR52 , BUR53 , BUR54 , BUR55 , BUR56 , BUR60 , BUR606 .

History: 2SCR533D | ZXT10N15DE6 | NTE2315 | 2N5015S | IDA968A | BF395D | BUR50

Keywords - BUR50S transistor datasheet

 BUR50S cross reference
 BUR50S equivalent finder
 BUR50S lookup
 BUR50S substitution
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