BUR50S Datasheet, Equivalent, Cross Reference Search
Type Designator: BUR50S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 350 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 70 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BUR50S Transistor Equivalent Substitute - Cross-Reference Search
BUR50S Datasheet (PDF)
bur50s.pdf
BUR50SHIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 1DESCRIPTION 2The BUR50S is a silicon multiepitaxial planarNPN transistors in JEDEC TO-3 metal case,TO-3intented for use in switching and linearapplications in military and ind
bur50.pdf
isc Silicon NPN Power Transistor BUR50DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage ,high speed,power switching inInductive circuits where fall time is critical.It is particularlysuited for battery swi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
