BUR50S Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUR50S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 350 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 125 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 70 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO3
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BUR50S datasheet
bur50s.pdf
BUR50S HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 DESCRIPTION 2 The BUR50S is a silicon multiepitaxial planar NPN transistors in JEDEC TO-3 metal case, TO-3 intented for use in switching and linear applications in military and ind
bur50.pdf
isc Silicon NPN Power Transistor BUR50 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min) CEO(SUS) High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is critical.It is particularly suited for battery swi
Otros transistores... BUR23, BUR24, BUR30, BUR31, BUR32, BUR33, BUR34, BUR50, 2SA1015, BUR51, BUR52, BUR53, BUR54, BUR55, BUR56, BUR60, BUR606
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