BUV12 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV12
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BUV12 Transistor Equivalent Substitute - Cross-Reference Search
BUV12 Datasheet (PDF)
..1. Size:212K inchange semiconductor
buv12.pdf
buv12.pdf
isc Silicon NPN Power Transistor BUV12DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V (Max.) @I = 6ACE(sat) CHigh Switching SpeedHigh DC Current Gain-: h = 20(Min.) @I = 6AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high power applications.ABSOLUTE MAXIMUM RATIN
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
