BUV12 Specs and Replacement

Type Designator: BUV12

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

 BUV12 Substitution

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BUV12 datasheet

 ..1. Size:212K  inchange semiconductor

 buv12.pdf pdf_icon

BUV12

isc Silicon NPN Power Transistor BUV12 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V (Max.) @I = 6A CE(sat) C High Switching Speed High DC Current Gain- h = 20(Min.) @I = 6A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATIN... See More ⇒

Detailed specifications: BUT91, BUT92, BUT92A, BUT93, BUV10N, BUV11, BUV11CECC, BUV11N, 2SA1837, BUV18, BUV18X, BUV19, BUV1O, BUV20, BUV21, BUV21N, BUV22

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