All Transistors. BUV12 Datasheet

 

BUV12 Datasheet and Replacement


   Type Designator: BUV12
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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BUV12 Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
 buv12.pdf pdf_icon

BUV12

isc Silicon NPN Power Transistor BUV12DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V (Max.) @I = 6ACE(sat) CHigh Switching SpeedHigh DC Current Gain-: h = 20(Min.) @I = 6AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high power applications.ABSOLUTE MAXIMUM RATIN

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N1433 | 2N97 | 2N4241 | 2SA489Y | 3DD5G | 2SA1770S-AN | DTL1642

Keywords - BUV12 transistor datasheet

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