BUV21 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV21
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BUV21 Transistor Equivalent Substitute - Cross-Reference Search
BUV21 Datasheet (PDF)
buv21.pdf
BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:NPNTF max = 0.4
buv21.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV21 DESCRIPTION With TO-3 package High DC current gain@IC=12A Fast switching times Low collector saturation voltage APPLICATIONS Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) an
buv21rev.pdf
Order this documentMOTOROLAby BUV21/DSEMICONDUCTOR TECHNICAL DATABUV21SWITCHMODE Series40 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high speed, high cu
buv21-d.pdf
BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:TF max = 0.4 ms at
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
