All Transistors. BUV21 Datasheet

 

BUV21 Datasheet and Replacement


   Type Designator: BUV21
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 40 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BUV21 Datasheet (PDF)

 ..1. Size:190K  onsemi
 buv21.pdf pdf_icon

BUV21

BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:NPNTF max = 0.4

 ..2. Size:117K  inchange semiconductor
 buv21.pdf pdf_icon

BUV21

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV21 DESCRIPTION With TO-3 package High DC current gain@IC=12A Fast switching times Low collector saturation voltage APPLICATIONS Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) an

 0.1. Size:139K  motorola
 buv21rev.pdf pdf_icon

BUV21

Order this documentMOTOROLAby BUV21/DSEMICONDUCTOR TECHNICAL DATABUV21SWITCHMODE Series40 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high speed, high current, high power applications.METAL TRANSISTOR High DC current gain: 200 VOLTShFE min. = 20 at IC = 12 A 250 WATTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 AVery fast switching

 0.2. Size:70K  onsemi
 buv21-d.pdf pdf_icon

BUV21

BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:TF max = 0.4 ms at

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Datasheet: BUV11CECC , BUV11N , BUV12 , BUV18 , BUV18X , BUV19 , BUV1O , BUV20 , 2SD2499 , BUV21N , BUV22 , BUV23 , BUV24 , BUV25 , BUV26 , BUV26A , BUV26F .

History: CIL381 | CZTA96 | 2N5416S | SS8050E | 2SD1125 | MMBTSC1623Y | TIP150

Keywords - BUV21 transistor datasheet

 BUV21 cross reference
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