BUV21
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUV21
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150
W
Tensión colector-base (Vcb): 250
V
Tensión colector-emisor (Vce): 200
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 40
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar BUV21
BUV21
Datasheet (PDF)
..1. Size:190K onsemi
buv21.pdf 
BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:NPNTF max = 0.4
..2. Size:117K inchange semiconductor
buv21.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV21 DESCRIPTION With TO-3 package High DC current gain@IC=12A Fast switching times Low collector saturation voltage APPLICATIONS Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) an
0.1. Size:139K motorola
buv21rev.pdf
Order this documentMOTOROLAby BUV21/DSEMICONDUCTOR TECHNICAL DATABUV21SWITCHMODE Series40 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high speed, high current, high power applications.METAL TRANSISTOR High DC current gain: 200 VOLTShFE min. = 20 at IC = 12 A 250 WATTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 AVery fast switching
0.2. Size:70K onsemi
buv21-d.pdf
BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:TF max = 0.4 ms at
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
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, 2SA1810
, 2SA1810B
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, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
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