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BUV21 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUV21
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 40 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar BUV21

 

BUV21 Datasheet (PDF)

 ..1. Size:190K  onsemi
buv21.pdf

BUV21 BUV21

BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:NPNTF max = 0.4

 ..2. Size:117K  inchange semiconductor
buv21.pdf

BUV21 BUV21

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV21 DESCRIPTION With TO-3 package High DC current gain@IC=12A Fast switching times Low collector saturation voltage APPLICATIONS Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) an

 0.1. Size:139K  motorola
buv21rev.pdf

BUV21 BUV21

Order this documentMOTOROLAby BUV21/DSEMICONDUCTOR TECHNICAL DATABUV21SWITCHMODE Series40 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high speed, high current, high power applications.METAL TRANSISTOR High DC current gain: 200 VOLTShFE min. = 20 at IC = 12 A 250 WATTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 AVery fast switching

 0.2. Size:70K  onsemi
buv21-d.pdf

BUV21 BUV21

BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:TF max = 0.4 ms at

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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