MJE5190J Datasheet. Specs and Replacement

Type Designator: MJE5190J

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO126

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MJE5190J datasheet

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isc Silicon PNP Power Transistors MJE5170/5171/5172 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min)- MJE5170 CEO(SUS) = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 Low Saturation Voltage Complement to the NPN MJE5180/5181/5182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose... See More ⇒

Detailed specifications: MJE51, MJE5170, MJE5171, MJE5172, MJE5180, MJE5181, MJE5182, MJE5190, TIP42, MJE5191, MJE5191J, MJE5192, MJE5192J, MJE5193, MJE5194, MJE5195, MJE51T

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