MJE5190J
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE5190J
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 2
MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
TO126
MJE5190J
Transistor Equivalent Substitute - Cross-Reference Search
MJE5190J
Datasheet (PDF)
9.1. Size:201K inchange semiconductor
mje51t.pdf 
isc Silicon NPN Power Transistor MJE51TDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage inverters, switching regulatorsand line operated amplifier applications. Especially wellsuited for switching power supply applicationsABSOLU
9.2. Size:200K inchange semiconductor
mje5180 mje5181 mje5182.pdf
isc Silicon NPN Power Transistors MJE5180/5181/5182DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)- MJE5180CEO(SUS)= 140V(Min)- MJE5181= 160V(Min)- MJE5182Low Saturation VoltageComplement to Type MJE5170/5171/5172Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose ampli
9.3. Size:217K inchange semiconductor
mje5170 mje5171 mje5172.pdf
isc Silicon PNP Power Transistors MJE5170/5171/5172DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)- MJE5170CEO(SUS)= -140V(Min)- MJE5171= -160V(Min)- MJE5172Low Saturation VoltageComplement to the NPN MJE5180/5181/5182Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
Datasheet: 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
