MJE5190J Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE5190J
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO126
Búsqueda de reemplazo de MJE5190J
MJE5190J PDF detailed specifications
mje51t.pdf
isc Silicon NPN Power Transistor MJE51T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLU... See More ⇒
mje5180 mje5181 mje5182.pdf
isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min)- MJE5180 CEO(SUS) = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 Low Saturation Voltage Complement to Type MJE5170/5171/5172 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ampli... See More ⇒
mje5170 mje5171 mje5172.pdf
isc Silicon PNP Power Transistors MJE5170/5171/5172 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min)- MJE5170 CEO(SUS) = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 Low Saturation Voltage Complement to the NPN MJE5180/5181/5182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose... See More ⇒
Otros transistores... MJE51 , MJE5170 , MJE5171 , MJE5172 , MJE5180 , MJE5181 , MJE5182 , MJE5190 , TIP42 , MJE5191 , MJE5191J , MJE5192 , MJE5192J , MJE5193 , MJE5194 , MJE5195 , MJE51T .
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