MJE5190J - описание и поиск аналогов

 

MJE5190J - Аналоги. Основные параметры


   Наименование производителя: MJE5190J
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 2 MHz
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO126

 Аналоги (замена) для MJE5190J

   - подбор ⓘ биполярного транзистора по параметрам

 

MJE5190J - технические параметры

 9.1. Size:201K  inchange semiconductor
 mje51t.pdf pdf_icon

MJE5190J

isc Silicon NPN Power Transistor MJE51T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications ABSOLU

 9.2. Size:200K  inchange semiconductor
 mje5180 mje5181 mje5182.pdf pdf_icon

MJE5190J

isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min)- MJE5180 CEO(SUS) = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 Low Saturation Voltage Complement to Type MJE5170/5171/5172 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ampli

 9.3. Size:217K  inchange semiconductor
 mje5170 mje5171 mje5172.pdf pdf_icon

MJE5190J

isc Silicon PNP Power Transistors MJE5170/5171/5172 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min)- MJE5170 CEO(SUS) = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 Low Saturation Voltage Complement to the NPN MJE5180/5181/5182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

Другие транзисторы... MJE51 , MJE5170 , MJE5171 , MJE5172 , MJE5180 , MJE5181 , MJE5182 , MJE5190 , TIP42 , MJE5191 , MJE5191J , MJE5192 , MJE5192J , MJE5193 , MJE5194 , MJE5195 , MJE51T .

History: 2SB1463

 

 
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