2ST5949 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2ST5949
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 17 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3
2ST5949 Transistor Equivalent Substitute - Cross-Reference Search
2ST5949 Datasheet (PDF)
..1. Size:135K st
2st5949.pdf
2st5949.pdf
2ST5949High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 250 V Complementary to 2ST2121 Typical ft = 25 MHz Fully characterized at 125 oCApplication1 Audio power amplifier2TO-3DescriptionThe device is a NPN transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for linea
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
