All Transistors. 2ST5949 Datasheet

 

2ST5949 Datasheet and Replacement


   Type Designator: 2ST5949
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 17 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3
 

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2ST5949 Datasheet (PDF)

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2ST5949

2ST5949High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 250 V Complementary to 2ST2121 Typical ft = 25 MHz Fully characterized at 125 oCApplication1 Audio power amplifier2TO-3DescriptionThe device is a NPN transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for linea

Datasheet: PXTA42 , PXTA92 , PZT4401 , PZT4403 , PZTA14 , PZTA44 , 2ST2121 , 2ST31A , A1013 , 2STA1694 , 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 .

Keywords - 2ST5949 transistor datasheet

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