All Transistors. 2ST5949 Datasheet

 

2ST5949 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2ST5949

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 17 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 25 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3

2ST5949 Transistor Equivalent Substitute - Cross-Reference Search

 

2ST5949 Datasheet (PDF)

1.1. 2st5949.pdf Size:135K _st

2ST5949
2ST5949

2ST5949 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2ST2121 Typical ft = 25 MHz Fully characterized at 125 oC Application 1 Audio power amplifier 2 TO-3 Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier

Datasheet: PXTA42 , PXTA92 , PZT4401 , PZT4403 , PZTA14 , PZTA44 , 2ST2121 , 2ST31A , BC639 , 2STA1694 , 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 .

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