2ST5949 Datasheet. Specs and Replacement
Type Designator: 2ST5949 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 17 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO3
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2ST5949 Substitution
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2ST5949 datasheet
2ST5949 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2ST2121 Typical ft = 25 MHz Fully characterized at 125 oC Application 1 Audio power amplifier 2 TO-3 Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linea... See More ⇒
Detailed specifications: PXTA42, PXTA92, PZT4401, PZT4403, PZTA14, PZTA44, 2ST2121, 2ST31A, BD777, 2STA1694, 2STA1695, 2STA1943, 2STA1962, 2STA2120, 2STA2121, 2STA2510, 2STC2510
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