2ST5949 PDF Specs and Replacement
Type Designator: 2ST5949
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 17 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3
2ST5949 Substitution
2ST5949 PDF detailed specifications
2st5949.pdf
2ST5949 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2ST2121 Typical ft = 25 MHz Fully characterized at 125 oC Application 1 Audio power amplifier 2 TO-3 Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linea... See More ⇒
Detailed specifications: PXTA42 , PXTA92 , PZT4401 , PZT4403 , PZTA14 , PZTA44 , 2ST2121 , 2ST31A , SS8050 , 2STA1694 , 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 .
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