2N60B Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N60B

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 85

Transition frequency (ft), MHz: 0.6

Collector capacitance (Cc), pF: 80

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2N60B transistor: TO5

2N60B Equivalent Transistors - Cross-Reference Search

2N60B PDF document for downloads:

1.1. ssw2n60b_ssi2n60b.pdf Size:648K _fairchild_semi

See also transistors datasheet: 2N6093 , 2N6094 , 2N6095 , 2N6096 , 2N6097 , 2N6098 , 2N6099 , 2N60A , BC237 , 2N60C , 2N61 , 2N610 , 2N6100 , 2N6101 , 2N6102 , 2N6103 , 2N6104 .

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