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View cem6426 datasheet:

cem6426cem6426

CEM6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4.7A, RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 4.7 ADrain Current-Pulsed a IDM 18.8 AMaximum Power Dissipation PD 2.5 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 50 C/WRev 3. 2010.JulyDetails are subject to change without notice . http://www.cetsemi.com1CEM6426Electrical Charac

 

Keywords - ALL TRANSISTORS DATASHEET

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