All Transistors. Datasheet

 

View hgn100n12s datasheet:

hgn100n12shgn100n12s

P-1HGN100N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching7.8RDS(on),typ mW Enhanced Body diode dv/dt capability102 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsGate UPSDFN5*6 Motor ControlSrcPin 1Part Number Package MarkingS DHGN100N12S DFN5*6 GN100N12SS DS DGDAbsolute Maximum Ratings at Tj=25 (unless otherwise specified)Parameter Symbol Conditions Value UnitTC=25 102Continuous Drain Current (Silicon Limited)ID TC=100 72 AContinuous Drain Current (Package Limited) TC=25 60Drain to Source Voltage VDS - 120 VGate to Source Voltage VGS - 20 VPulsed Drain Current IDM - 20

 

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 hgn100n12s.pdf Design, MOSFET, Power

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