View fdb024n04al7 datasheet:

August 2010FDB024N04AL7N-Channel PowerTrench MOSFET 40V, 219A, 2.4mFeatures Description RDS(on) = 2.0m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet Low Gate Chargemaintain superior switching performance. High Performance Trench Technology for Extremely Low RDS(on)Application High Power and Current Handling Capability DC to DC Convertors / Synchronous Rectification RoHS CompliantD (Pin4, tab)GD2-PAK-7L(Pin1)FDB Series with suffix -L7S (Pin2,3,5,6,7)MOSFET Maximum Ratings TC = 25oC unless otherwise noted*Symbol Parameter Ratings UnitsVDSS Drain to Source Voltage 40 VVGSS Gate to Source Voltage 20 V- Continuous (TC = 25oC, Silico

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