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fdy4000czfdy4000cz

November 2009FDY4000CZComplementary N & P-Channel PowerTrenchMOSFET Features General DescriptionQ1: N-Channel This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Max rDS(on) 0.7 at VGS = 4.5V, ID = 600mATrench process to optimize the rDS(ON) @ VGS= 2.5V and Max rDS(on) 0.85 at VGS = 2.5V, ID = 500mAspecify the rDS(ON) @ VGS = 1.8V. Max rDS(on) 1.25 at VGS = 1.8V, ID =150 mAApplicationsQ2: P-Channel Level shifting Max rDS(on) 1.2 at VGS = -4.5V, ID = -350mA Power Supply Converter Circuits Max rDS(on) 1.6 at VGS = -2.5V, ID = -300mA Max rDS(on) 2.7 at VGS = -1.8V, ID = -150mA Load/Power Switching Cell Phones, Pagers ESD protection diode (note 3) RoHS Compliant 65 S2 4 3D24G2 5 2 G11D1 6 1 S123MOSFET Maximum Ratings TC = 25C unless otherwise note

 

Keywords - ALL TRANSISTORS DATASHEET

 fdy4000cz.pdf Design, MOSFET, Power

 fdy4000cz.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdy4000cz.pdf Database, Innovation, IC, Electricity

 

 
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