View ksp12 datasheet:

KSP12Darlington Transistor Collector-Emitter Voltage: VCES=20V Collector Power Dissipation: PC (max)=625mWTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 10 VPC Collector Power Dissipation 625 mWTJ Junction Temperature 150 CTSTG Storage Temperature -55 ~ 150 CElectrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units...BVCES Collector-Emitter Breakdown Voltage IC=100A, IB=0 20 VICBO Collector Cut-off Current VCB=15V, IE=0 100 nAICES Collector Cut-off Current VCE=15V, IB=0 100 nAIEBO Emitter Cut-off Current VEC=10V, IC=0 100 nAhFE DC Current Gain VCE=5V, IC=10mA 20KVCE (sat) Collector-Emitter Satur

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