View ftk6601 datasheet:

SEMICONDUCTORFTK6601TECHNICAL DATAP-channel and N-channel Complementary MOSFETS General Description SOT-23-6L The FTK6601 uses advanced trench technology to provide excellent and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. MARKING: L6601 Maximum ratings (Ta=25 unless otherwise noted) Value Parameter Symbol UnitN-channel P-channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS 12 12 V Continuous Drain Current(1) ID 3.4 -2.3 A Pulsed Drain Current (2) IDM 30 -30 A Power Dissipation PD 1.15 1.15 W Thermal Resistance from Junction to Ambient(1) RJA 110 110 /W Junction Temperature TJ 150 150 Storage Temperature Tstg -55~+150 -55~+150 1.The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still ai

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